BTD1768BA3 参数 Datasheet PDF下载

CYStech Electronics Corp.

General Purpose NPN Epitaxial Planar Transistor

Spec. No. : C304A3-B

Issued Date : 2006.08.21

Revised Date :

Page No. : 1/4

BTD1768BA3

Description

The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose

application.

Features

•

Low collector saturation voltage

•

High breakdown voltage, V

CEO

=80V (min.)

•

High collector current, I

C(max)

=1A (DC)

•

Pb-free package

Symbol

BTD1768BA3

Outline

TO-92

B：Base

C：Collector

E：Emitter

E BC

Absolute Maximum Ratings

(Ta=25°C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Power Dissipation

Thermal Resistance, Junction to Ambient

Junction Temperature

Storage Temperature

Note : Pulse test, P

W

≤

10ms, Duty

≤

50%.

BTD1768BA3

CYStek Product Specification

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

D

R

θJA

Tj

Tstg

Limits

100

80

5

1

2

(Note)

750

167

150

-55~+150

Unit

V

V

V

A

A

mW

°C/W

°C

°C