CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C304N3
Issued Date : 2005.01.10
Revised Date :
Page No. : 1/4
BTD1768N3
Description
The BTD1768N3 is designed for use in driver and output stages of AF amplifier and general purpose
application.
Features
•
Low collector saturation voltage
•
High breakdown voltage, V
CEO
=80V (min.)
•
High collector current, I
C(max)
=1A (DC)
Symbol
BTD1768N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : Pulse test, P
W
≤
10ms, Duty
≤
50%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
R
θJA
Tj
Tstg
Limits
100
80
5
1
2
(Note)
225
556
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
BTD1768N3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
