CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C842J3
Issued Date : 2003.05.25
Revised Date :
Page No. : 1/4
BTD1758J3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.4 V (typical), at I
C
/ I
B
= 2A / 0.5A
•
Excellent current gain characteristics
•
Complementary to BTB1182J3
Symbol
BTD1758J3
Outline
TO-252
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (T
C
=25℃)
Junction Temperature
Storage Temperature
Note
:
Single Pulse , Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Tj
Tstg
Limits
40
30
5
2
5
(Note)
10
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
BTD1758J3
CYStek Product Specification