Spec. No. : C223M3
Issued Date : 2003.05.26
Revised Date :
CYStech Electronics Corp.
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=10µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=20V. IE=0
VEB=4V,IC=0
IC=400mA, IB=20mA
IC=500mA, IB=50mA
IC=800mA, IB=80mA
VCE=2V, IC=500mA
VCE=2V, IC=100mA
VCE=2V, IC=500mA
VCE=2V, IC=800mA
VCE=5V, IE=50mA, f=100MHz
VCB=10V, f=1MHz
BVCBO
BVCEO
BVEBO
ICBO
40
20
5
-
-
V
-
-
V
-
-
V
-
-
-
0.5
0.5
0.3
0.4
0.5
1
µA
µA
V
IEBO
-
*VCE(sat)
*VCE(sat)
*VCE(sat)
1
-
0.15
0.2
0.25
-
2
3
-
V
-
V
*VBE(on)
*hFE1
*hFE2
*hFE3
fT
-
V
82
82
80
-
-
560
560
-
-
-
-
-
-
-
-
150
15
MHz
pF
Cob
-
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE2
Rank
P
Q
R
S
Range
82~180
120~270
180~390
270~560
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCE(SAT)@IC=20IB
HFE@VCE=2V
100
10
1
100
10
100
1000
0.1
1
10
100
1000
Collector Current ---IC(mA)
Collector Current--- IC(mA)
BTD1664M3
CYStek Product Specification