Spec. No. : C602N3
Issued Date : 2017.11.06
Revised Date : 2018.02.07
Page No. : 2/7
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
V
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
ICP
IB
120
60
7
3
5
0.5
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current
A
310 (Note 1)
Power Dissipation
mW
PD
500 (Note 2)
660 (Note 3)
403 (Note 1)
250 (Note 2)
190 (Note 3)
Thermal Resistance, Junction to Ambient
RθJA
°C/W
°C
Operating Junction and Storage Temperature Range
Tj ; Tstg
-55~+150
Note : 1. Device mounted on FR-4 PCB with minimum pad.
2. Device mounted on FR-4 PCB with area of 4.5”×5”, mounting pad 0.02 in ² of 2 oz. copper.
3. Device mounted on an FR-4 PCB, single sided copper, tin plated, mounting pad for collector 1cm².
Characteristics
(Ta=25°C)
Symbol
BVCBO
Min.
Typ.
Max.
Unit
Test Conditions
120
60
7
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
mV
mV
mV
mV
V
V
V
-
-
-
-
IC=100μA
IC=1mA
IE=50μA
VCB=120V
VEB=7V
BVCEO
BVEBO
ICBO
100
100
150
200
250
300
1
1.2
1
-
390
-
-
-
18
-
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
*hFE 4
fT
98
131
90
150
-
-
-
-
-
IC=1A, IB=50mA
IC=1A, IB=20mA
IC=1A, IB=100mA
IC=2A, IB=200mA
IC=1A, IB=50mA
IC=1A, IB=100mA
VCE=2V, IC=1A
VCE=2V, IC=100mA
VCE=2V, IC=500mA
VCE=2V, IC=1A
-
-
-
-
150
180
100
50
100
-
-
-
-
-
-
-
VCE=2V, IC=2A
VCE=2V, IC=100mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
MHz
pF
Cob
ton
tstg
tf
11
40
500
120
VCC=30V, IC=1A, IB1=-IB2=33mA,
ns
-
-
Ω
RL=30
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
BTD1616AN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
