CYStech Electronics Corp.
High Speed Switching Transistor
Spec. No. : C651I3
Issued Date : 2005.10.05
Revised Date :2009.02.04
Page No. : 1/5
BTC5103I3
Features
•
Low V
CE
(sat), V
CE
(sat)=0.33 V(typical), at I
C
/ I
B
= 3A / 0.3A
•
High Switching Speed
•
Wide SOA
•
Complementary to BTA1952I3
•
RoHS compliant package
BV
CEO
I
C
R
CESAT
60V
5A
110mΩ
Symbol
BTC5103I3
Outline
TO-251
B：Base
C：Collector
E：Emitter
B C E
C
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (T
A
=25℃)
Power Dissipation (T
C
=25℃)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Tj
Tstg
Limits
100
60
6
5
9
*1
1
30
*2
150
-55~+150
Unit
V
V
V
A
W
°C
°C
Note : *1. Single Pulse Pw=100ms
*2. Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm or larger
BTC5103I3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
