BTC5177N3 参数 Datasheet PDF下载

CYStech Electronics Corp.

High Frequency NPN Epitaxial Planar Transistor

Spec. No. : C213N3

Issued Date : 2003.05.13

Revised Date :

Page No. : 1/3

BTC5177N3

Description

The BTC5177N3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification

application.

Symbol

Outline

BTC5177N3

SOT-23

B：Base

C：Collector

E：Emitter

Features

•

Low current consumption and high gain:

∣S

21e

∣²

= 12dB ( typ. ) at V

CE

= 2 V, I

C

= 7 mA, f = 2 GHz

∣S

21e

∣²

= 11dB ( typ. ) at V

CE

= 1 V, I

C

= 5 mA, f = 2 GHz

•

Mini-mold package

Applications

•

Low noise and high gain amplifiers & Oscillator buffer amplifiers

Absolute Maximum Ratings

(T

A

=25℃)

Parameters

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Symbol

V

CEO

V

CBO

V

EBO

I

C

Pd

T

j

T

stg

Limits

3

5

2

10

150

150

-65~+150

Unit

V

V

V

mA

mW

°C

°C

BTC5177N3

CYStek Product Specification