Spec. No. : C212N3
Issued Date : 2002.05.08
Revised Date :2002.11.01
Page No. : 4/8
CYStech Electronics Corp.
0.9
1.2
1.5
1.8
2.1
2.4
2.7
2.8
1.21
1.42
1.63
1.84
2.04
2.25
2.46
2.53
0.282
0.239
0.246
0.276
0.303
0.301
0.242
0.206
48.2
68.6
0.29
0.27
0.24
0.21
0.16
0.14
0.17
0.19
13.05
10.97
9.34
8.08
7.10
6.33
5.68
5.48
1.42
1.57
1.79
2.04
2.30
2.50
2.62
2.65
2.01
1.82
1.79
2.45
1.87
2.50
2.71
2.91
12.80
10.86
9.19
7.84
6.69
5.64
4.78
4.50
90.8
114.6
139.6
165.5
-167.8
-158.8
• Smoothed noise data (VC=5V, IC=4.5mA, IB=60uA)
FREQ.
FMIN
GAMMA OPT
Rn
Ga
F50-S
F50-M
G50
(GHz)
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
2.8
(dB)
0.87
1.08
1.28
1.49
1.70
1.91
2.12
2.33
2.54
2.61
Mag
Ang
(To 50)
0.49
0.38
0.32
0.29
0.27
0.23
0.19
0.16
0.19
0.22
(dB)
19.43
16.36
13.85
11.84
10.24
9.00
(dB)
1.80
1.51
1.51
1.65
1.85
2.09
2.32
2.51
2.64
2.68
(dB)
2.40
1.84
2.38
1.88
1.88
2.50
1.81
2.61
2.63
2.92
(dB)
18.39
15.83
13.47
11.54
9.89
0.631
0.411
0.288
0.237
0.233
0.251
0.267
0.256
0.193
0.157
12.4
26.3
42.5
61.0
81.7
104.9
130.5
158.5
-170.9
-160.1
8.55
8.03
7.40
7.27
6.35
6.64
5.50
6.45
5.20
HSPICE 2G.6 Model
• NPN BJT Parameters
IS=1.444E-16 (A)
IKR=10.0E-3
MJE=0.3882
TR=1.0E-9 (Sec)
CJS=2.43E-13 (F)
VJS=0.5734 (V)
MJS=0.3798
XTB=0.0
BF=85.9
ISC=1.21E-16
NC=1.01
TF=1.22E-11 (Sec)
XTF=1.70
NF=1.0
VAF=45.9 (V)
IKF=160.3E-3 (A)
ISE=2.0E-18 (A)
NE=2.0
RB=4.30 (Ohm)
IRB=20.0E-3 (A)
RBM=2.78 (Ohm)
RE=1.011 (Ohm)
RC=16.69 (Ohm)
CJE=6.04E-13 (F)
VJE=1.003 (V)
VTF=0.69 (V)
ITF=0.1 (A)
PTF=10.0 (deg)
CJC=2.38E-13 (F)
VJC=0.7 (V)
EG=1.11 (eV)
XTI=3.0
BR=18.54
FC=0.9
TNOM=25 (°C)
NR=1.01
MJC=0.4474
XCJC=0.3
VAR=6.299
• B’-E’ DIODE Parameters
IS=1.0E-22 (A)
RS=10.0 (Ohm)
N=1.0
CJO=1.0E-15 (F)
XTI=3.0
KF=0.0
VJ=1.003 (V)
M=0.3882
FC=0.9
AF=1.0
BV=0.0 (V)
IBV=1.0E-3 (A)
TNOM=25 (°C)
TT=0.0 (Sec)
EG=1.11 (eV)
• C’-S’ DIODE Parameters
IS=1.0E-22 (A)
RS=0.0 (Ohm)
N=1.0
CJO=1.0E-15 (F)
XTI=3.0
KF=0.0
VJ=0.5734 (V)
M=0.3798
FC=0.5
AF=1.0
BV=0.0 (V)
TNOM=27 (°C)
BTC5094N3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
