CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Spec. No. : C210M3
Issued Date : 2003.05.15
Revised Date :2005.10.21
Page No. : 1/5
BTC4505M3
Features
•
High breakdown voltage. (BV
CEO
=400V)
•
Low saturation voltage, typically V
CE
(sat) =0.1V at I
C
/I
B=
10mA/1mA.
•
Complementary to BTA1759M3
•
Pb-free package
Symbol
BTC4505M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limit
400
400
6
300
600
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
BTC4505M3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
