CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C208S3
Issued Date : 2003.06.11
Revised Date :
Page No. : 1/4
BTC4102S3
Description
The BTC4102S3 is designed for high voltage amplification application.
Features
•
High breakdown voltage. (BV
CEO
=120V)
•
Complementary to BTA1579S3
Symbol
BTC4102S3
Outline
SOT-323
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
120
120
5
50
200
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
BTC4102S3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
