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BTC3906N3 参数 Datasheet PDF下载

BTC3906N3图片预览
型号: BTC3906N3
PDF下载: 下载PDF文件 查看货源
内容描述: 通用NPN外延平面晶体管 [General Purpose NPN Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 177 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTC3906N3的Datasheet PDF文件第1页浏览型号BTC3906N3的Datasheet PDF文件第3页浏览型号BTC3906N3的Datasheet PDF文件第4页  
Spec. No. : C208N3  
Issued Date : 2002.05.11  
Revised Date : 2005.01.12  
Page No. : 2/4  
CYStech Electronics Corp.  
Characteristics  
(Ta=25°C)  
Symbol  
Min. Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
180  
160  
6
-
-
-
V
IC=100µA  
IC=1mA  
BVCEO  
BVEBO  
ICBO  
-
V
-
-
V
IE=10µA  
VCB=120V  
VEB=4V  
-
-
-
50  
50  
0.15  
0.2.  
1
nA  
nA  
V
IEBO  
-
*VCE(sat)  
*VCE(sat)  
*VBE(sat)  
*VBE(sat)  
*hFE1  
*hFE2  
*hFE3  
*hFE4  
fT  
1
2
1
2
-
0.1  
-
IC=10mA, IB=1mA  
IC=50mA, IB=5mA  
IC=10mA, IB=1mA  
IC=50mA, IB=5mA  
VCE=5V, IC=1mA  
VCE=5V, IC=10mA  
VCE=5V, IC=50mA  
VCE=6V, IC=2mA  
-
V
-
-
V
-
-
1
V
25  
60  
40  
52  
100  
-
-
-
-
-
-
-
-
-
-
-
390  
-
-
-
MHz  
pF  
VCE=20V, IC=10mA, f=100MHz  
VCB=20V, IE=0A,f=1MHz  
Cob  
-
6
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
Classification Of hFE4  
Rank  
K
P
Q
R
Range  
52~120  
82~180  
120~270  
180~390  
Characteristic Curves  
Current Gain vs Collector Current  
Saturation Voltage vs Collector Current  
VCE(SAT)@IC=10IB  
1000  
1000  
100  
10  
HFE@VCE=6V  
100  
0.1  
1
10  
100  
0.1  
1
10  
100  
Collector Current--- IC(mA)  
Collector Current ---IC(mA)  
BTC3906N3  
CYStek Product Specification  
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