Spec. No. : C319M3
Issued Date : 2007.05.31
Revised Date : 2013.09.23
Page No. : 2/6
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
180
120
7
1
2
V
V
V
A
A
W
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
IB
0.6
Power Dissipation
Pd
1
2
(Note 1)
(Note 2)
W
W
Junction Temperature
Storage Temperature
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 . When mounted on ceramic with area measuring 40×40×1 mm
Tj
Tstg
150
-55~+150
°C
°C
Characteristics
(Ta=25°C)
Symbol
BVCBO
Min.
180
120
7
-
-
-
-
-
-
100
100
80
50
-
Typ.
Max.
Unit
Test Conditions
-
-
-
-
-
0.1
0.2
-
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
V
V
V
V
-
IC=50μA
IC=1mA
IE=50μA
VCB=180V
VEB=6V
BVCEO
BVEBO
ICBO
100
100
0.2
0.5
1
0.9
-
270
-
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
fT
IC=500mA, IB=50mA
IC=1A, IB=50mA
IC=500mA, IB=50mA
VCE=5V, IC=500mA
VCE=5V, IC=50mA
VCE=5V, IC=100mA
VCE=5V, IC=800mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
-
-
-
20
MHz
pF
Cob
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE 2
Rank
P
Q
Range
100~200
120~270
BTC2880M3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
