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BTC2880M3 参数 Datasheet PDF下载

BTC2880M3图片预览
型号: BTC2880M3
PDF下载: 下载PDF文件 查看货源
内容描述: [General Purpose NPN Epitaxial Planar Transistor]
分类和应用:
文件页数/大小: 6 页 / 247 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTC2880M3的Datasheet PDF文件第1页浏览型号BTC2880M3的Datasheet PDF文件第3页浏览型号BTC2880M3的Datasheet PDF文件第4页浏览型号BTC2880M3的Datasheet PDF文件第5页浏览型号BTC2880M3的Datasheet PDF文件第6页  
Spec. No. : C319M3  
Issued Date : 2007.05.31  
Revised Date : 2013.09.23  
Page No. : 2/6  
CYStech Electronics Corp.  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
Collector-Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
180  
120  
7
1
2
V
V
V
A
A
W
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Base Current  
IB  
0.6  
Power Dissipation  
Pd  
1
2
(Note 1)  
(Note 2)  
W
W
Junction Temperature  
Storage Temperature  
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm  
2 . When mounted on ceramic with area measuring 40×40×1 mm  
Tj  
Tstg  
150  
-55~+150  
°C  
°C  
Characteristics  
(Ta=25°C)  
Symbol  
BVCBO  
Min.  
180  
120  
7
-
-
-
-
-
-
100  
100  
80  
50  
-
Typ.  
Max.  
Unit  
Test Conditions  
-
-
-
-
-
0.1  
0.2  
-
-
-
-
-
-
-
-
-
-
V
V
V
nA  
nA  
V
V
V
V
-
IC=50μA  
IC=1mA  
IE=50μA  
VCB=180V  
VEB=6V  
BVCEO  
BVEBO  
ICBO  
100  
100  
0.2  
0.5  
1
0.9  
-
270  
-
IEBO  
*VCE(sat)  
*VCE(sat)  
*VBE(sat)  
*VBE(on)  
*hFE 1  
*hFE 2  
*hFE 3  
fT  
IC=500mA, IB=50mA  
IC=1A, IB=50mA  
IC=500mA, IB=50mA  
VCE=5V, IC=500mA  
VCE=5V, IC=50mA  
VCE=5V, IC=100mA  
VCE=5V, IC=800mA  
VCE=10V, IC=50mA, f=100MHz  
VCB=10V, IE=0A,f=1MHz  
-
-
-
20  
MHz  
pF  
Cob  
*Pulse Test: Pulse Width 380μs, Duty Cycle2%  
Classification Of hFE 2  
Rank  
P
Q
Range  
100~200  
120~270  
BTC2880M3  
CYStek Product Specification