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BTC2655K3-0-BM-G 参数 Datasheet PDF下载

BTC2655K3-0-BM-G图片预览
型号: BTC2655K3-0-BM-G
PDF下载: 下载PDF文件 查看货源
内容描述: [General Purpose NPN Epitaxial Planar Transistor]
分类和应用:
文件页数/大小: 7 页 / 291 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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Spec. No. : C602K3  
Issued Date : 2011.12.21  
Revised Date :2013.12.25  
Page No. : 2/7  
CYStech Electronics Corp.  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (pulse)  
Base Current  
Symbol  
Limits  
Unit  
VCBO  
VCEO  
VEBO  
IC  
ICP  
IB  
120  
60  
7
V
V
V
A
A
2
5
(Note)  
0.5  
A
Power Dissipation  
PD  
900  
mW  
Thermal Resistance, Junction to Ambient  
Operating Junction and Storage Temperature Range  
RθJA  
139  
-55~+150  
°C/W  
°C  
Tj ; Tstg  
Note : Pulse test, pulse width300μs, duty cycle2%  
Characteristics  
(Ta=25°C)  
Symbol  
BVCBO  
Min.  
120  
60  
7
-
-
-
-
-
0.5  
200  
80  
-
-
-
-
-
Typ.  
Max.  
Unit  
Test Conditions  
-
-
-
-
-
-
-
-
V
V
V
nA  
nA  
mV  
IC=50μA  
BVCEO  
BVEBO  
ICBO  
IC=1mA  
IE=50μA  
VCB=120V  
VEB=7V  
100  
100  
300  
300  
350  
1.2  
400  
-
-
-
-
-
IEBO  
*VCE(sat)  
*RCE(sat)  
*VCE(sat)  
*VBE(sat)  
*hFE 1  
*hFE 2  
fT  
Cob  
ton  
tstg  
tf  
100  
100  
-
0.9  
-
IC=1A, IB=50mA  
IC=1A, IB=50mA  
IC=1A, IB=20mA  
IC=1A, IB=50mA  
VCE=2V, IC=500mA  
VCE=2V, IC=1.5A  
VCE=2V, IC=300mA, f=100MHz  
VCB=10V, IE=0A,f=1MHz  
Ω
m
mV  
V
-
-
-
250  
13  
40  
500  
120  
MHz  
pF  
VCC=30V, IC=1A, IB1=-IB2=33mA,  
ns  
Ω
RL=30  
-
*Pulse Test: Pulse Width 300μs, Duty Cycle2%  
BTC2655K3  
CYStek Product Specification