Spec. No. : C858K3
Issued Date : 2014.11.24
Revised Date :
CYStech Electronics Corp.
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)
Base Current
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
IC
ICP
IB
80
30
6
2
5
0.5
A
(Note 1)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature and Storage Range
PD
RθJA
Tj ; Tstg
1
125
-55~+150
W
°C/W
°C
Note 1: Single pulse, Pw≤300μs, Duty Cycle≤2%.
Characteristics
(Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
80
30
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA
nA
mV
Ω
m
V
V
-
MHz
pF
IC=100μA
IC=10mA
IE=100μA
VCB=80V
VEB=6V
IC=1.5A, IB=30mA
IC=1.5A, IB=30mA
IC=1.5A, IB=30mA
VCE=2V, IC=500mA
VCE=2V, IC=500mA
VCE=5V, IC=500mA
VCB=10V, IE=0A,f=1MHz
100
100
500
333
1.2
1
320
-
30
IEBO
VCE(sat)
RCE(sat)
VBE(sat)
VBE(on)
hFE
*
*
*
*
*
160
120
-
-
fT
Cob
270
16.5
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
BTC2328AK3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
