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BTC2328AK3-0-TB-G 参数 Datasheet PDF下载

BTC2328AK3-0-TB-G图片预览
型号: BTC2328AK3-0-TB-G
PDF下载: 下载PDF文件 查看货源
内容描述: [NPN Epitaxial Planar Transistor]
分类和应用:
文件页数/大小: 8 页 / 378 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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Spec. No. : C858K3  
Issued Date : 2014.11.24  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/8  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current(DC)  
Collector Current(Pulsed)  
Base Current  
Symbol  
Limits  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
ICP  
IB  
80  
30  
6
2
5
0.5  
A
(Note 1)  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
Operating Junction Temperature and Storage Range  
PD  
RθJA  
Tj ; Tstg  
1
125  
-55~+150  
W
°C/W  
°C  
Note 1: Single pulse, Pw300μs, Duty Cycle2%.  
Characteristics  
(Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
ICBO  
80  
30  
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA  
nA  
mV  
Ω
m
V
V
-
MHz  
pF  
IC=100μA  
IC=10mA  
IE=100μA  
VCB=80V  
VEB=6V  
IC=1.5A, IB=30mA  
IC=1.5A, IB=30mA  
IC=1.5A, IB=30mA  
VCE=2V, IC=500mA  
VCE=2V, IC=500mA  
VCE=5V, IC=500mA  
VCB=10V, IE=0A,f=1MHz  
100  
100  
500  
333  
1.2  
1
320  
-
30  
IEBO  
VCE(sat)  
RCE(sat)  
VBE(sat)  
VBE(on)  
hFE  
*
*
*
*
*
160  
120  
-
-
fT  
Cob  
270  
16.5  
*Pulse Test: Pulse Width 300μs, Duty Cycle2%  
BTC2328AK3  
CYStek Product Specification