Spec. No. : C652I3
Issued Date : 2005.06.23
Revised Date :2009.02.04
Page No. : 2/6
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
150
150
5
V
V
V
IC(DC)
IC(Pulse)
Pd(TA=25℃)
10
15
1.75
20
150
Collector Current
A
*1
Power Dissipation
W
Pd(TC=25℃)
Junction Temperature
Storage Temperature
Tj
Tstg
°C
°C
-55~+150
Note : *1. Single Pulse Pw=100ms
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=100μA, IE=0
IC=1mA, IB=0
BVCBO
BVCEO
ICEO
ICBO
IEBO
150
150
-
-
-
-
-
-
-
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
μA
μA
mA
V
V
V
V
V
200
200
2
1.5
3
VCE=150V, IE=0
VCB=150V, IE=0
VEB=5V, IC=0
IC=5A, IB=10mA
IC=10A, IB=100mA
IC=5A, IB=2.5mA
IC=5A, IB=5mA
VCE=3V, IC=5A
VCE=3V, IC=10A
IC=5A
*VCE(sat)
*VCE(sat)
*VCE(sat)
1
2
3
2
2
*VBE(sat)
*VBE(on)
*VBE(on)
*VFEC
*hFE1
1
2
2.8
4.5
3
20
-
V
V
K
-
VCE=3V, IC=5A
VCE=3V, IC=10A
*hFE2
100
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
Package
TO-251
Shipping
Marking
C1510
BTC1510I3
80 pcs / tube, 50 tubes / box
(RoHS compliant)
BTC1510I3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
