Spec. No. : C652T3
Issued Date : 2003.09.30
Revised Date :
CYStech Electronics Corp.
Page No. : 2/5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
VCEO
150
V
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
150
VEBO
5
IC(DC)
IC(Pulse)
Pd(TA=25℃)
Pd(TC=25℃)
10
Collector Current
A
15
1
*1
Power Dissipation
W
10
150
-55~+150
Junction Temperature
Tj
Tstg
°C
°C
Storage Temperature
Note : *1. Single Pulse Pw=100ms
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
ICEO
150
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
IC=100µA, IE=0
150
-
V
IC=1mA, IB=0
-
200
200
2
µA
µA
mA
V
VCE=150V, IE=0
VCB=150V, IE=0
VEB=5V, IC=0
ICBO
-
IEBO
-
*VCE(sat)
*VCE(sat)
*VCE(sat)
1
-
2
3
IC=5A, IB=10mA
IC=10A, IB=100mA
IC=5A, IB=2.5mA
IC=5A, IB=5mA
VCE=3V, IC=5A
VCE=3V, IC=10A
IC=5A
2
3
-
V
-
1.5
2
V
*VBE(sat)
-
V
*VBE(on)
*VBE(on)
*VFEC
1
2
-
-
2.8
4.5
3
V
V
-
V
*hFE 1
*hFE 2
2
20
-
K
VCE=3V, IC=5A
VCE=3V, IC=10A
100
-
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTC1510T3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
