Spec. No. : C652F3
Issued Date : 2004.09.07
Revised Date :
CYStech Electronics Corp.
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
150
150
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
Unit
V
V
µA
µA
mA
V
V
V
V
V
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
BVCBO
BVCEO
ICEO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
200
200
2
2
3
1.5
2
2.8
4.5
3
20
-
VCE=150V, IE=0
VCB=150V, IE=0
VEB=5V, IC=0
IC=5A, IB=10mA
IC=10A, IB=100mA
IC=5A, IB=2.5mA
IC=5A, IB=5mA
VCE=3V, IC=5A
VCE=3V, IC=10A
IC=5A
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
1
2
3
*VBE(sat)
*VBE(on)
*VBE(on)
*VFEC
1
2
V
V
K
-
*hFE 1
*hFE 2
2
100
VCE=3V, IC=5A
VCE=3V, IC=10A
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
10000
100000
10000
1000
100
HFE@VCE=3V
125℃
VCE(SAT)@IC=250IB
25℃
1000
100
75℃
125℃
75℃
25℃
10
1
10
100
1000
10000
100
1000
10000
Collector Current---IC(mA)
Collector Current---IC(mA)
BTC1510F3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
