Spec. No. : C811T3
Issued Date : 2017.01.18
Revised Date :
CYStech Electronics Corp.
Page No. : 2/5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
-100
-100
-6
V
V
V
Continuous
Pulse
-5
-8
Collector Current
IC
A
*1
TA=25℃
TC=25℃
1.5
20
Power Dissipation
PD
W
Operating Junction Temperature Range
Storage Temperature Range
Tj
Tstg
-55~+150
-55~+150
°C
°C
.
Note : *1 Single Pulse Pw=10ms
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
-100
-100
-6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
-
-
-
V
V
V
nA
μA
nA
V
V
V
V
-
IC=-50μA, IE=0
IC=-10mA, IB=0
IE=-50μA, IC=0
-50
-10
-50
-0.2
-0.3
-0.4
-1.2
390
-
VCB=-100V, IE=0
VCE=-100V, IB=0
VEB=-6V, IC=0
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-3A, IB=-300mA
IC=-2A, IB=-200mA
VCE=-3V, IC=-500mA
VCE=-2V, IC=-1A
-
180
120
-
-
-
MHz
VCE=-5V, IC=-500mA, f=100MHz
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
BTB857T3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
