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BTB772AT3-0-BL-X 参数 Datasheet PDF下载

BTB772AT3-0-BL-X图片预览
型号: BTB772AT3-0-BL-X
PDF下载: 下载PDF文件 查看货源
内容描述: [Low Vcesat PNP Epitaxial Planar Transistor]
分类和应用:
文件页数/大小: 7 页 / 268 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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Spec. No. : C240T3  
Issued Date : 2017.04.05  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/7  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
VCBO  
VCEO  
VEBO  
IC  
-50  
-30  
-7  
-3  
V
V
V
A
A
ICP  
-5 (Note 1)  
Power Dissipation @TA=25°C  
1
W
W
°C  
PD  
Power Dissipation @TC=25°C  
10  
Operating Junction and Storage Temperature Range  
Tj ; Tstg  
-55~+150  
Thermal Data  
Parameter  
Thermal Resistance, Junction-to-case, max  
Thermal Resistance, Junction-to-ambient, max  
Symbol  
RθJC  
RθJA  
Value  
12.5  
125  
Unit  
°C/W  
°C/W  
:
Note 1. Single Pulse , Pw=10ms  
Characteristics (Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
ICBO  
-50  
-30  
-7  
-
-
-
-
-
-
-
-
-
-
-
-
V
V
V
nA  
nA  
V
V
V
-
-
IC=-50μA, IE=0  
IC=-1mA, IB=0  
IE=-50μA, IC=0  
VCB=-50V, IE=0  
-100  
-100  
-0.2  
-0.3  
-1.2  
-
390  
-
-
IEBO  
VEB=-7V, IC=0  
*VCE(sat)  
*VCE(sat)  
*VBE(sat)  
*hFE 1  
*hFE 2  
*hFE 3  
fT  
-0.05  
-0.2  
-1  
IC=-400mA, IB=-20mA  
IC=-2A, IB=-100mA  
IC=-2A, IB=-200mA  
VCE=-2V, IC=-100mA  
VCE=-2V, IC=-500mA  
VCE=-2V, IC=-1A  
-
160  
180  
150  
-
-
-
-
-
190  
33  
MHz  
pF  
VCE=-10V, IC=-0.5A, f=100MHz  
VCB=-10V, f =1MHz  
Cob  
-
-
*Pulse Test : Pulse Width 380μs, Duty Cycle2%  
BTB772AT3  
CYStek Product Specification