Spec. No. : C655N3
Issued Date : 2017.11.27
Revised Date :
CYStech Electronics Corp.
Page No. : 2/7
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
IC
ICP
RθJA
RθJC
-120
-120
-5
-2
A
C/W
W
Collector Current (Pulse)
-4 (Note 1)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Power Dissipation @ TA=25°C
500
100
0.3
PD
Power Dissipation @ TC=25°C
Opeearting Junction Temperature Range
Storage Temperature Range
1.5
-55~+175
-55~+175
Tj
Tstg
C
≦
≦
Note : 1. Single Pulse Pw 350μs, Duty 2%.
Characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IC=-1mA, IB=0
IC=-100μA, IE=0
VCB=-120V, IE=0
VCE=-120V, IB=0
VEB=-5V, IC=0
IC=-2A, IB=-2mA
VCE=-4V, IC=-2A
VCE=-4V, IC=-1A
VCE=-4V, IC=-2A
BVCEO
BVCBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
-120
-120
-
-
-
-
-
-
-
-
-
-
-
-
V
V
nA
μA
mA
V
V
-
-
pF
-100
-1
-2
-1.8
-2.2
-
1000
1000
-
-
-
-
200
VCB=-10V, IE=0A, f=1MHz
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Recommended Soldering Footprint
BTB1580SN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
