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BTB1580SN3 参数 Datasheet PDF下载

BTB1580SN3图片预览
型号: BTB1580SN3
PDF下载: 下载PDF文件 查看货源
内容描述: [PNP Epitaxial Planar Transistor]
分类和应用:
文件页数/大小: 7 页 / 452 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTB1580SN3的Datasheet PDF文件第1页浏览型号BTB1580SN3的Datasheet PDF文件第3页浏览型号BTB1580SN3的Datasheet PDF文件第4页浏览型号BTB1580SN3的Datasheet PDF文件第5页浏览型号BTB1580SN3的Datasheet PDF文件第6页浏览型号BTB1580SN3的Datasheet PDF文件第7页  
Spec. No. : C655N3  
Issued Date : 2017.11.27  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/7  
Absolute Maximum Ratings (Ta=25C)  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Symbol  
Limits  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
ICP  
RθJA  
RθJC  
-120  
-120  
-5  
-2  
A
C/W  
W
Collector Current (Pulse)  
-4 (Note 1)  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
Power Dissipation @ TA=25°C  
500  
100  
0.3  
PD  
Power Dissipation @ TC=25°C  
Opeearting Junction Temperature Range  
Storage Temperature Range  
1.5  
-55~+175  
-55~+175  
Tj  
Tstg  
C  
Note : 1. Single Pulse Pw 350μs, Duty 2%.  
Characteristics (Ta=25C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
IC=-1mA, IB=0  
IC=-100μA, IE=0  
VCB=-120V, IE=0  
VCE=-120V, IB=0  
VEB=-5V, IC=0  
IC=-2A, IB=-2mA  
VCE=-4V, IC=-2A  
VCE=-4V, IC=-1A  
VCE=-4V, IC=-2A  
BVCEO  
BVCBO  
ICBO  
ICEO  
IEBO  
*VCE(sat)  
*VBE(on)  
*hFE1  
*hFE2  
Cob  
-120  
-120  
-
-
-
-
-
-
-
-
-
-
-
-
V
V
nA  
μA  
mA  
V
V
-
-
pF  
-100  
-1  
-2  
-1.8  
-2.2  
-
1000  
1000  
-
-
-
-
200  
VCB=-10V, IE=0A, f=1MHz  
*Pulse Test : Pulse Width 300μs, Duty Cycle2%  
Recommended Soldering Footprint  
BTB1580SN3  
CYStek Product Specification