Spec. No. : C655M3
Issued Date : 2017.01.26
Revised Date : 2017.02.02
Page No. : 5/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Reverse-Biased Voltage
Built-in Diode Characteristics
100
10000
1000
100
Cib
-40°C
0°C
25°C
85°C
140°C
Cob
10
0.1
1 10
Reverse-Biased Voltage(V)
100
1
10
100
1000
10000
R
V ,
-IF, Forward Current(mA)
Power Derating Curves
Power Derating Curve
3
2.5
2
4
3.5
See
Note 3 on page 2
3
2.5
2
See Note 4 on page 2
See Note 2 on page 2
1.5
1
1.5
1
0.5
0
0.5
0
0
25
50
75 100 125 150 175 200
0
25
50
75 100 125 150 175 200
TA, Ambient Temperature(℃)
TC, Case Temeprature(℃)
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
7
6
5
4
3
2
1
0
6
5
4
3
2
1
IB=-20mA
IB=-50mA
IB=-10mA
IB=-6mA
IB=-4mA
IB=-2mA
IB=-25mA
IB=-10mA
IB=-5mA
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
,
,
-VCE Collector-to-Emitter Voltage(V)
-VCE Collector-to-Emitter Voltage(V)
BTB1580SM3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
