Spec. No. : C655M3
Issued Date : 2017.01.26
Revised Date : 2017.02.02
Page No. : 2/8
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
IC
-120
-120
-5
-4
A
ICP
-6 (Note 1)
208
125 (Note 2)
62.5 (Note 3)
85 (Note 4)
43
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Power Dissipation
RθJA
RθJC
°C/W
0.7
1.2 (Note 2)
2.4 (Note 3)
1.8 (Note 4)
3.5
PD
W
Power Dissipation @ TC=25°C
Opeearting Junction Temperature Range
Storage Temperature Range
Tj
Tstg
-55~+175
-55~+175
°C
≦
≦
Note : 1. Single Pulse Pw 350μs, Duty 2%.
2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm.
3. When mounted on a ceramic board with area measuring 40×40×1mm.
4. When mounted on a FR-4 PCB with area measuring 30×30×1 mm.
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCEO
BVCBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
-120
-120
-
-
-
-
-
-
-
-
-
-
-
-
V
V
nA
μA
mA
V
V
-
-
pF
IC=-1mA, IB=0
IC=-100μA, IE=0
VCB=-120V, IE=0
VCE=-120V, IB=0
VEB=-5V, IC=0
IC=-2A, IB=-2mA
VCE=-4V, IC=-2A
VCE=-4V, IC=-1A
VCE=-4V, IC=-2A
VCB=-10V, IE=0A, f=1MHz
-100
-1
-2
-1.8
-2.2
-
1000
1000
-
-
-
-
200
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
BTB1580SM3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
