CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C816M3-A
Issued Date : 2003.05.26
Revised Date : 2005.11.28
Page No. : 1/5
BTB1427M3
Features
•
Low V
CE
(sat), V
CE
(sat)=-0.6 V (typical), at I
C
/ I
B
= -4A / -0.1A
•
Excellent DC current gain characteristics
Symbol
BTB1427M3
Outline
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Pd
Tj
Tstg
Limits
-20
-15
-6
-5
-10
(Note 1)
0.5
2
(Note 2)
150
-55~+150
Unit
V
V
V
A
W
°C
°C
Note : 1
.
Single Pulse Pw=10ms
2. When mounted on a 40
×40 ×0.7
mm ceramic board.
BTB1427M3
CYStek Product Specification