CYStech Electronics Corp.
Silicon PNP Epitaxial Planar Transistor
Spec. No. : C854M3
Issued Date : 2004.08.20
Revised Date :
Page No. : 1/4
BTB1236AM3
Description
•
High BV
CEO
•
High current capability
Symbol
BTB1236AM3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Limits
-180
-160
-5
-1.5
-3
0.6
1
2
Unit
V
V
V
A
A
W
W
W
°C/W
°C/W
°C/W
°C
°C
(Note 1)
(Note 2)
(Note 3)
Thermal Resistance, Junction to Ambient
R
θJA
208
125
(Note 2)
62.5
(Note 3)
Junction Temperature
Storage Temperature
Note :
1. Single Pulse Pw≦350µs, Duty≦2%.
Tj
Tstg
150
-55~+150
2.
When mounted on FR-4 PCB with area measuring 10×10×1 mm.
3
.
When mounted on ceramic with area measuring 40×40×1 mm
BTB1236AM3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
