Spec. No. : C815I3
Issued Date : 2005.03.29
Revised Date :
CYStech Electronics Corp.
Page No. : 2/ 5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
-25
-20
-5
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
VCBO
VCEO
VEBO
IC
V
V
-5
A
A
ICP
-8 (Note 1)
-0.5
1
IB
Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
Pd
W
Pd
Tj
10
150
Junction Temperature
Storage Temperature
°C
°C
Tstg
-55~+150
.
Note : 1 Single Pulse Pw=10ms
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
-25
-20
-5
-
-
-
V
IC=-10µA, IE=0
-
-
V
IC=-1mA, IB=0
-
-
-
-
V
IE=-10µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
IC=-3A, IB=-60mA
IC=-3A, IB=-60mA
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-4A
VCE=-5V, IC=-200mA, f =100MHz
VCB=-10V, f =1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
-0.5
-0.5
-500
-1.3
380
-
µA
µA
mV
V
IEBO
-
*VCE(sat)
*VBE(sat)
*hFE
-
-
-380
-1.0
-
190
60
-
-
-
*hFE
-
fT
320
60
-
-
MHz
pF
Cob
-
BTB1205I3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
