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BTB1197N3 参数 Datasheet PDF下载

BTB1197N3图片预览
型号: BTB1197N3
PDF下载: 下载PDF文件 查看货源
内容描述: 低饱和PNP外延平面晶体管 [Low Saturation PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 265 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTB1197N3的Datasheet PDF文件第1页浏览型号BTB1197N3的Datasheet PDF文件第3页浏览型号BTB1197N3的Datasheet PDF文件第4页浏览型号BTB1197N3的Datasheet PDF文件第5页  
Spec. No. : C314N3  
Issued Date : 2005.04.20  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/ 5  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
Collector-Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
-50  
V
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
-32  
-5  
Collector Current (DC)  
Collector Current (Pulse)  
-1  
A
ICP  
-2  
310 (Note 1)  
500 (Note 2)  
403 (Note 1)  
250 (Note 2)  
-55~+150  
-55~+150  
Power Dissipation  
Pd  
mW  
Thermal Resistance, Junction to Ambient  
Junction Temperature  
RθJA  
°C/W  
Tj  
Tstg  
°C  
°C  
Storage Temperature  
Note: 1.Device mounted on FR-4 PCB with minimum pad  
2.Device mounted on FR-4 PCB with area of 4.5”×5”, mounting pad 0.02 in² of 2 oz copper  
Characteristics  
(Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
ICBO  
-40  
-
-
-
-
-
-
-
-
-
-
-
V
IC=-50µA  
IC=-1mA  
IE=-50µA  
VCB=-30V  
VEB=-4V  
-32  
-
V
-5  
-
-
V
-100  
-100  
-0.25  
-0.30  
-0.65  
-1.2  
-1.1  
420  
-
nA  
nA  
V
IEBO  
-
*VCE(sat)  
*VCE(sat)  
*VCE(sat)  
*VBE(sat)  
*VBE(on)  
1
2
3
-
IC=-500mA, IB=-50mA  
IC=-1A, IB=-100mA  
IC=-2A, IB=-200mA  
IC=-1A, IB=-100mA  
VCE=-2V, IC=-1A  
-
V
-
V
-
V
-
V
*hFE  
*hFE  
*hFE  
*hFE  
fT  
1
2
3
4
180  
100  
80  
-
-
-
VCE=-3V, IC=-100mA  
VCE=-2V, IC=-500mA  
VCE=-2V, IC=-1A  
-
-
-
-
-
30  
-
-
VCE=-2V, IC=-2A  
100  
-
200  
12  
-
MHz  
pF  
VCE=-5V, IC=-50mA, f=100MHz  
Cob  
25  
VCB=-10V, f=1MHz  
*Pulse Test: Pulse Width 380µs, Duty Cycle2%  
BTB1197N3  
CYStek Product Specification