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BTB1198K3-X-BM-G 参数 Datasheet PDF下载

BTB1198K3-X-BM-G图片预览
型号: BTB1198K3-X-BM-G
PDF下载: 下载PDF文件 查看货源
内容描述: [PNP Epitaxial Planar Transistor]
分类和应用:
文件页数/大小: 7 页 / 298 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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Spec. No. : C824K3  
Issued Date : 2008.10.31  
Revised Date :2013.10.09  
Page No. : 2/7  
CYStech Electronics Corp.  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
Junction Temperature  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
ICP  
PD  
RθJA  
Tj  
Tstg  
Limits  
Unit  
V
V
V
A
-120  
-100  
-5  
-1  
-2 (Note)  
900  
139  
A
mW  
°C/W  
°C  
150  
Storage Temperature  
-55~+150  
°C  
Note : Pulse test, PW 10ms, Duty 50%.  
Characteristics  
(Ta=25°C)  
Symbol  
BVCBO  
Min.  
-120  
-100  
-5  
-
-
-
-
-
Typ.  
Max.  
Unit  
Test Conditions  
-
-
-
-
-
-
-
V
V
V
nA  
nA  
V
V
V
V
-
IC=-50μA  
BVCEO  
BVEBO  
ICBO  
IC=-1mA  
IE=-50μA  
VCB=-100V  
VEB=-4V  
-100  
-100  
-0.5  
-0.5  
-1.2  
-0.75  
560  
-
IEBO  
-
-0.16  
-0.3  
-
*VCE(sat)  
*VCE(sat)  
*VBE(sat)  
*VBE(on)  
*hFE  
IC=-500mA, IB=-50mA  
IC=-1A, IB=-100mA  
IC=-1A, IB=-50mA  
-
120  
-
-
-
VCE=-5V, IC=-5mA  
VCE=-5V, IC=-200mA  
VCE=-10V, IC=-50mA, f=100MHz  
VCB=-10V, f=1MHz  
fT  
Cob  
200  
11  
MHz  
pF  
-
-
*Pulse Test: Pulse Width 380μs, Duty Cycle2%  
Classification Of hFE  
Rank  
Q
R
S
Range  
120~270  
180~390  
270~560  
BTB1198K3  
CYStek Product Specification