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BTA9012A3-0-TB-G 参数 Datasheet PDF下载

BTA9012A3-0-TB-G图片预览
型号: BTA9012A3-0-TB-G
PDF下载: 下载PDF文件 查看货源
内容描述: [General Purpose PNP Epitaxial Planar Transistor]
分类和应用:
文件页数/大小: 8 页 / 326 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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Spec. No. : C305A3  
Issued Date : 2014.02.17  
Revised Date : 2014.03.11  
Page No. : 2/8  
CYStech Electronics Corp.  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Collector-Base Voltage  
Symbol  
Limits  
Unit  
VCBO  
VCEO  
VEBO  
IC  
-80  
-60  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
-7  
V
Collector Current  
-0.6  
A
Power Dissipation  
Pd  
625  
mW  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction Temperature  
Storage Temperature  
RθJA  
Tj  
200  
150  
Tstg  
-55~+150  
°C  
Characteristics  
(Ta=25°C)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
ICBO  
-80  
-60  
-7  
-
-
-
-
-
144  
20  
200  
-
-
-
-
-
-
-
-
V
V
V
μA  
μA  
V
V
V
-
-
IC=-100μA  
IC=-1mA  
IE=-100μA  
VCB=-80V, IE=0  
VEB=-7V, IC=0  
IC=-100mA, IB=-10mA  
IC=-100mA, IB=-10mA  
VCE=-1V, IC=-100mA  
VCE=-1V, IC=-50mA  
VCE=-1V, IC=-500mA  
VCE=-10V, IC=-20mA, f=100MHz  
VCB=-10V, f=1MHz  
-0.1  
-0.1  
-0.2  
-1.2  
-1.0  
246  
-
IEBO  
-
*VCE(sat)  
*VBE(sat)  
*VBE(on)  
-0.09  
-0.83  
-0.76  
hFE  
hFE  
fT  
1
2
-
-
-
-
8.5  
MHz  
pF  
Cob  
4.5  
*Pulse Test: Pulse Width 380μs, Duty Cycle2%  
BTA9012A3  
CYStek Product Specification