CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C309N3
Issued Date : 2003.05.09
Revised Date : 2004.04.02
Page No. : 1/4
BTA1759N3
Description
•
High breakdown voltage. (BV
CEO
=-400V)
•
Low saturation voltage, typical V
CE(sat)
=-0.2V at Ic/I
B
=-20mA/-2mA.
•
Wide SOA (safe operation area).
•
Complementary to BTC4505N3.
Symbol
BTA1759N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limits
-400
-400
-7
-300
225
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
BTA1759N3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
