CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C309M3
Issued Date : 2003.06.30
Revised Date :
Page No. : 1/4
BTA1759M3
Description
•
High breakdown voltage. (BV
CEO
=-400V)
•
Low saturation voltage, typically V
CE(sat)
= -0.07V at Ic/I
B
=-10mA/-1mA.
•
Wide SOA (safe operation area).
•
Complementary to BTC4505M3.
Symbol
BTA1759M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Limits
-400
-400
-6
-300
0.6
1
(Note 1)
2
(Note 2)
208
125
(Note 1)
62.5
(Note 2)
150
-55~+150
Unit
V
V
V
mA
W
W
W
°C/W
°C/W
°C/W
°C
°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
R
θJA
Tj
Tstg
Note : 1.When mounted on FR-4 PCB with area measuring 10×10×1 mm
2.When mounted on ceramic with area measuring 40×40×1 mm
BTA1759M3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
