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BTA1727J3 参数 Datasheet PDF下载

BTA1727J3图片预览
型号: BTA1727J3
PDF下载: 下载PDF文件 查看货源
内容描述: [High Voltage PNP Epitaxial Planar Transistor]
分类和应用:
文件页数/大小: 7 页 / 433 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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Spec. No. : C236J3  
Issued Date : 2018.05.29  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/7  
Absolute Maximum Ratings (Ta=25C)  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Power Dissipation @ TA=25°C  
Power Dissipation @ TC=25°C  
Operating Junction Temperature Range  
Storage Temperature Range  
Symbol  
Limits  
Unit  
V
VCBO  
VCEO  
VEBO  
IC  
-400  
-400  
-7  
-500  
-1  
1
10  
mA  
A
ICP  
PD  
W
Tj  
Tstg  
-55~+150  
-55~+150  
C  
Thermal Data  
Parameter  
Thermal Resistance, Junction-to-ambient, max  
Thermal Resistance, Junction-to-case, max  
Symbol  
RθJA  
RθJC  
Value  
125  
12.5  
Unit  
C/W  
Characteristics  
(Ta=25C)  
Symbol  
BVCBO  
Min.  
-400  
-400  
-7  
-
-
-
-
-
-
Typ.  
Max.  
Unit  
V
Test Conditions  
-
-
-
-
-
-
-
-
-
-
-
-
7
-
-
-
IC=-10A  
BVCEO  
BVEBO  
ICBO  
IC=-1mA  
IE=-1A  
VCB=-400V  
VEB=-6V  
-100  
-100  
-200  
-500  
-1  
-1.2  
320  
-
nA  
mV  
V
IEBO  
VCE(sat)  
*VCE(sat)  
*VCE(sat)  
1
IC=-20mA, IB=-2mA  
IC=-50mA, IB=-5mA  
IC=-100mA, IB=-10mA  
IC=-100mA, IB=-10mA  
VCE=-5V, IC=-50mA  
VCE=-10V, IC=-100mA  
VCE=-10V, IC=-10mA  
VCB=-10V, IE=0A,f=1MHz  
2
3
*VBE(sat)  
*hFE  
*hFE  
fT  
1
2
140  
70  
40  
-
-
-
-
15  
MHz  
pF  
Cob  
*Pulse Test: Pulse Width 380μs, Duty Cycle2%  
BTP1727J3  
CYStek Product Specification