Spec. No. : C655E3
Issued Date : 2016.01.28
Revised Date :
CYStech Electronics Corp.
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
IC
-150
-150
-5
-5
A
Collector Current (Pulse)
ICP
-10 (Note 1)
Power Dissipation @ TA=25°C
Power Dissipation @ TC=25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Opeearting Junction Temperature Range
Storage Temperature Range
2
20
62.5
6.2
-55~+150
PD
W
RθJA
RθJC
Tj
°C/W
°C
Tstg
-55~+150
≦
≦
Note : 1. Single Pulse Pw 350μs, Duty 2%.
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCEO
BVCBO
ICBO
ICEO
IEBO
-150
-150
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IC=-1mA, IB=0
V
IC=-100μA, IE=0
VCB=-150V, IE=0
VCE=-150V, IB=0
VEB=-5V, IC=0
IC=-2A, IB=-2mA
IC=-3A, IB=-12mA
IC=-4A, IB=-20mA
IC=-3A, IB=-12mA
VCE=-3V, IC=-3A
VCE=-3V, IC=-500mA
VCE=-3V, IC=-1A
VCE=-3V, IC=-3A
IC=-4A
-100
-1
-2
-1.2
-1.5
-2.5
-2.3
-2.5
-
nA
μA
mA
*VCE(sat)
V
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
VFEC
-
-
1000
1000
1000
-
-
-
-
V
pF
-
-
-2
200
Cob
-
VCB=-10V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
BTA1505E3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
