Spec. No. : C656T3
Issued Date : 2004.09.01
Revised Date :
CYStech Electronics Corp.
Page No. : 2/4
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
VCEO
-120
-120
-5
V
V
V
A
Collector-Emitter Voltage
Emitter-Base Voltage
VEBO
Collector Current (DC)
Collector Current (Pulse)
IC
ICP
-10
-15 (Note )
1
10
A
W
Pd(TA=25℃)
Pd(TC=25℃)
Power Dissipation
W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
RθJA
RθJC
Tj
125
12.5
150
°C/W
°C/W
°C
Storage Temperature
Tstg
-55~+150
°C
≦
≦
Note : Single Pulse Pw 350µs, Duty 2%.
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCEO
BVCBO
BVEBO
ICBO
-120
-
-
-
-
-
-
-
-
-
-
V
IC=-1mA, IB=0
-120
-
V
IC=-100µA, IE=0
IE=-1mA, IC=0
-5
-
-
V
-200
-200
-2
µA
µA
mA
V
VCB=-120V, IE=0
VCE=-120V, IB=0
VEB=-5V, IC=0
IC=-4A, IB=-16mA
IC=-8A, IB=-80mA
IC=-8A, IB=-80mA
VCE=-4V, IC=-4A
VCE=-4V, IC=-4A
VCE=-4V, IC=-8A
VCB=-10V, IE=0A, f=1MHz
ICEO
-
IEBO
-
*VCE(sat)
*VCE(sat)
1
2
-
-2
-4
-
V
*VBE(sat)
*VBE(on)
*hFE1
-
-4.5
-2.8
12
-
V
V
1
100
-
-
-
K
*hFE2
Cob
-
300
pF
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTA1210T3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
