Spec. No. : C303N3A
Issued Date : 2003.04.12
Revised Date
CYStech Electronics Corp.
Page No. : 2/4
Absolute Maximum Ratings @TA=25℃
Parameters
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current(single diode loaded)
Continuous forward current(double diode loaded)
Repetitive peak forward current
Non-repetitive peak forward current
@square wave, Tj=125℃ prior to surge t=1µs
t=1ms
Symbol
VRRM
VR
Min
Max
85
Unit
V
-
-
-
-
75
V
215
125
450
IF
mA
mA
IFRM
-
-
-
4
1
A
A
IFSM
0.5
250
150
+150
A
t=1s
Total power dissipation(Note 1)
Junction Temperature
Ptot
Tj
Tstg
mW
°C
°C
-
Storage Temperature
-65
Note 1: Device mounted on an FR-4 PCB.
Electrical Characteristics @ Tj=25℃ unless otherwise specified
Parameters Symbol Conditions
Min Typ. Max Unit
IF=1mA
715 mV
IF=10mA
855 mV
Forward voltage
VF
-
-
-
-
IF=50mA
1
V
V
nA
µA
µA
µA
IF=150mA
VR=25V
1.25
30
VR=75V
1
Reverse current
IR
VR=25V,Tj=150℃
30
50
VR=75V,Tj=150℃
Diode capacitance
Cd
trr
VR=0V, f=1MHz
-
-
-
-
2
pF
when switched from IF=10mA to
IR=10mA,RL=100Ω, measured
at IR=1mA
when switched from IF=10mA
tr=20ns
Reverse recovery time
4
ns
Forward recovery voltage
Vfr
-
-
1.75
V
Thermal Characteristics
Symbol
Parameter
Conditions
Value
Unit
℃
Rth,j-tp
Rth, j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
360
500
/W
/W
Note 1
℃
Note 1: Device mounted on an FR-4 PCB.
BAW56N3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
