Spec. No. : C302N3-H
Issued Date : 2003.04.14
Revised Date :
CYStech Electronics Corp.
Page No. : 2/4
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature Tstg ................................................................................................... -65~+150 °C
Junction Temperature Tj .............................................................................................................. +125°C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) Ptot (Note) ......................................................................... 230 mW
• Maximum Voltages and Currents (Ta=25°C)
Repetitive Peak Reverse Voltage VRRM .............................................................................................. 30 V
Continuous Forward Current IF ................................................................................................... 200 mA
Repetitive Peak Forward Current(tp≤1s,duty cycle≤0.5)………………………………………… 300mA
Non-repetitive Peak Forward Current (tp<10ms, sinusoidal) IFSM ............................................... 600 mA
Note:for double diodes, Ptot is the total power dissipation of both diodes.
Characteristics (Ta=25°C)
Characteristic
Reverse Breakdown Voltage
Symbol
VBR
Condition
Min.
30
-
-
-
-
-
-
-
Max.
-
Unit
V
IR=100µA
IF=0.1mA
IF=1mA
VF(1)
VF(2)
VF(3)
VF(4)
VF(5)
IR
240
320
400
500
800
2
mV
mV
mV
mV
mV
µA
pF
Forward Voltage (Note 1)
IF=10mA
IF=30mA
IF=100mA
VR=25V,Tj=25℃
VR=1V, f=1MHz
Reverse Leakage Current (Note 2)
Diode Capacitance
CD
10
IF=IR=10mA RL=100Ω
Reverse Recovery Time
trr
-
5
ns
measured at IR=1mA
Notes: 1.pulse test, tp=380µs,duty cycle<2%.
2.pulse test, tp=5ms,duty cycle<2%.
BAT54N3/BAT54AN3/BAT54CN3/BAT54SN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
