Spec. No. : C302S3-H
Issued Date : 2004.04.13
Revised Date :
CYStech Electronics Corp.
Page No. : 2/4
Absolute Maximum Ratings
Symbol Parameter
Per diode
Conditions
Min
Max
Unit
VR
continuous reverse voltage
-
-
-
-
-
-65
-
-65
30
200
300
600
200
+150
125
+125
V
mA
mA
mA
mW
℃
IF
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation (per package)
storage temperature
IFRM
IFSM
Ptot
Tstg
Tj
tp≤1s, δ≤0.5
tp<10ms
Tamb≤25℃
junction temperature
operating ambient temperature
℃
Tamb
℃
Characteristics (Ta=25°C, unless otherwise specified)
Parameter
Reverse Breakdown Voltage
Symbol
VBR
Condition
Min.
30
-
-
-
-
-
-
-
Max.
-
Unit
V
IR=100µA
IF=0.1mA
IF=1mA
VF(1)
VF(2)
VF(3)
VF(4)
VF(5)
IR
240
320
400
500
800
2
mV
mV
mV
mV
mV
µA
pF
Forward Voltage (Note 1)
IF=10mA
IF=30mA
IF=100mA
VR=25V
Reverse Leakage Current (Note 2)
Diode Capacitance
CD
VR=1V, f=1MHz
10
when switched from IF= 10mA
to IR=10mA; RL=100Ω;
measured at IR=1mA
Reverse Recovery Time
trr
-
5
ns
Notes: 1.pulse test, tp=380µs, duty cycle<2%.
2.pulse test, tp=300µs, duty cycle<2%.
Thermal Characteristics
Symbol
Parameter
Conditions
Value
625
Unit
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
Note 1 : Refer to SOT-323 standard mounting conditions.
BAT54S3/BAT54AS3/BAT54CS3/BAT54SS3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
