Spec. No. : C248S3
Issued Date : 2012.07.09
Revised Date :
CYStech Electronics Corp.
Page No. : 2/6
Absolute Maximum Ratings
Symbol Parameter
Per diode
Conditions
Min
Max
Unit
VR
continuous reverse voltage
-
-
70
70
V
mA
mA
mW
℃
IF
continuous forward current
repetitive peak forward current
total power dissipation (per package)
storage temperature
IFRM
Ptot
Tstg
Tamb
tp≤1s, δ≤0.5
Tamb≤25℃
-
100
200
+150
+125
-
-65
-55
operating ambient temperature
℃
Characteristics (Ta=25°C, unless otherwise specified)
Parameter
Symbol
VBR
Condition
Min.
Max.
Unit
V
Reverse Breakdown Voltage
IR=10μA
IF=1mA
IF=15mA
VR=50V
70
-
-
VF(1)
VF(2)
IR
410
1000
100
2
mV
mV
nA
pF
Forward Voltage (Note 1)
-
Reverse Leakage Current (Note 1)
Diode Capacitance
-
CD
VR=0V, f=1MHz
-
when switched from IF= 10mA
to IR=10mA; RL=100Ω;
measured at IR=1mA
Reverse Recovery Time
trr
-
5
ns
Notes: 1.pulse test, tp=300μs, duty cycle<2%.
Thermal Characteristics
Symbol
Parameter
thermal resistance from junction to ambient
Conditions
Value
625
Unit
K/W
Rth j-a
note 1
Note 1 : Refer to SOT-323 standard mounting conditions.
BAS70S3/BAS70AS3/BAS70CS3/BAS70SS3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
