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BAS21N3 参数 Datasheet PDF下载

BAS21N3图片预览
型号: BAS21N3
PDF下载: 下载PDF文件 查看货源
内容描述: 高压开关二极管 [High voltage switching diode]
分类和应用: 二极管开关高压
文件页数/大小: 4 页 / 164 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BAS21N3的Datasheet PDF文件第1页浏览型号BAS21N3的Datasheet PDF文件第3页浏览型号BAS21N3的Datasheet PDF文件第4页  
Spec. No. : C355N3-A  
Issued Date : 2004.04.13  
Revised Date  
CYStech Electronics Corp.  
Page No. : 2/4  
Absolute Maximum Ratings @TA=25℃  
Parameter  
Repetitive peak reverse voltage  
Continuous reverse voltage  
Symbol  
VRRM  
VR  
Min  
Max  
250  
200  
200  
625  
Unit  
V
-
-
-
V
Continuous forward current  
IF  
mA  
mA  
Repetitive peak forward current  
Non-repetitive peak forward current  
@square wave, Tj=25prior to surge t=1µs  
IFRM  
-
-
-
9
3
A
A
IFSM  
t=100µs  
t=10ms  
1.7  
250  
150  
+150  
A
Total power dissipation(Note 1)  
Junction Temperature  
Ptot  
Tj  
Tstg  
mW  
°C  
°C  
-
Storage Temperature  
-65  
Note 1: Device mounted on an FR-4 PCB.  
Electrical Characteristics @ Tj=25unless otherwise specified  
Parameters Symbol Conditions  
Forward voltage VF  
Min Typ. Max Unit  
IF=100mA  
1
V
-
-
IF=200mA  
1.25  
100  
100  
V
VR=200V  
nA  
µA  
Reverse current  
IR  
-
-
-
-
VR=200V,Tj=150℃  
Diode capacitance  
Cd  
VR=0V, f=1MHz  
5
pF  
when switched from IF=30mA to  
IR=30mA,RL=100, measured  
at IR=3mA  
Reverse recovery time  
trr  
-
-
50  
ns  
Thermal Characteristics  
Symbol  
Parameter  
Conditions  
Value  
Unit  
Rth,j-tp  
Rth, j-a  
thermal resistance from junction to tie-point  
thermal resistance from junction to ambient  
330  
500  
/W  
/W  
Note 1  
Note 1: Device mounted on an FR-4 PCB.  
BAS21N3  
CYStek Product Specification