Spec. No. : C302S346.13
Revised Date : 2012.02.10
Page No. : 2/7
CYStech Electronics Corp.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature Tstg.................................................................................................... -65~+150 °C
Junction Temperature Tj .......................................................................................................-55~ +125°C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) Ptot (Note) ......................................................................... 200 mW
• Maximum Voltages and Currents (Ta=25°C)
Repetitive Peak Reverse Voltage VRRM............................................................................................... 40 V
Continuous Forward Current IF ................................................................................................... 200 mA
Repetitive Peak Forward Current(tp≤1s,duty cycle≤0.5)………………………………………… 300mA
Non-repetitive Peak Forward Current (tp<10ms, sinusoidal) IFSM ............................................... 600 mA
Note: for double diodes, Ptot is the total power dissipation of both diodes.
Characteristics (Ta=25°C)
Characteristic
Symbol
VBR
Condition
Min.
Max.
-
Unit
V
Reverse Breakdown Voltage
IR=100μA
IF=1mA
40
-
VF(1)
VF(2)
VF(3)
IR
320
500
550
200
10
mV
mV
mV
nA
pF
Forward Voltage (Note 1)
IF=40mA
IF=100mA
-
-
VR=30V, Tj=25℃
Reverse Leakage Current (Note 2)
Diode Capacitance
-
CD
VR=1V, f=1MHz
-
IF=IR=10mA RL=100Ω
measured at IR=1mA
Reverse Recovery Time
trr
-
5
ns
Notes: 1.pulse test, tp=380μs,duty cycle<2%.
2.pulse test, tp=5ms,duty cycle<2%.
BAR40S3/BAR40AS3/BAR40CS3/BAR40SS3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
