CYStech Electronics Corp.
Advanced Schottky Barrier Diodes
Spec. No. : C343SN
Issued Date : 2003.08.19
Revised Date :2003.12.05
Page No. : 1/4
ASD723SN
Features:
●
Designed for mounting on small surface
●
Low stored charge
●
Majority carrier conduction
Mechanical data:
●
Case: 0805(2012) Standard package, molded plastic
●
Terminals : Solder plated, solderable per MIL-STD-750, method 2026.
●
Polarity: Indicated by cathode band
●
Mounting position: Any
●
Weight: 4.8mg (approximately)
Absolute Maximum Ratings(
Ta=25℃
)
Characteristics
Continuous Reverse Voltage
Average Rectified Current
Forward Surge Current @ 8.3ms single half sine-wave
superimposed on rated load(JEDEC method)
Capacitance between
Terminals @ f=1MHz
and applied
10V
DC
Reverse Voltage
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
O
I
FSM
C
T
Tj
Tstg
Value
30
200
1.5
20
-40 to +125
-40 to +125
Unit
V
mA
A
pF
°C
°C
Electrical Characteristics
( T
A
=25°C, unless otherwise noted)
Parameter
Forward Voltage
Reverse Current
Condition
I
F
= 200mA
DC
VR = 30V
DC
Symbol
V
F
I
R
Min
-
-
Typ
-
-
Max
0.55
15
Unit
V
µA
ASD723SN
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
