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1N5819 参数 Datasheet PDF下载

1N5819图片预览
型号: 1N5819
PDF下载: 下载PDF文件 查看货源
内容描述: 1.0Amp硅肖特基势垒整流器 [1.0Amp Silicon Schottky Barrier Rectifiers]
分类和应用: 二极管
文件页数/大小: 3 页 / 137 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号1N5819的Datasheet PDF文件第1页浏览型号1N5819的Datasheet PDF文件第3页  
Spec. No. : C331LB  
Issued Date : 2004.07.05  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/3  
Characteristic Curves  
Maximum Non-Repetitive Forward Surge Current  
Forward Current Derating Curve  
30  
25  
20  
15  
10  
5
1.2  
1
Tj=25℃, 8.3ms Single  
Half Sine Wave  
JEDEC method  
0.8  
0.6  
0.4  
0.2  
0
Single Phase, Half Wave  
60Hz, Resistive or Inductive  
Load  
0.375"(0.95mm)lead length  
0
1
10  
100  
0
50  
100  
150  
Number of Cycles at 60Hz  
Ambient Temperature---TA(℃)  
Junction Capacitance vs Reverse Voltage  
Forward Current vs Forward Voltage  
350  
100  
10  
300  
250  
200  
150  
100  
50  
1N5817  
1N5818-5819  
1
Tj=25℃, Pulse  
width=300μs  
1% Duty cycle  
0.1  
0.01  
0
0.01  
0.1  
1
10  
100  
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5  
Forward Voltage---VF(V)  
Reverse Voltage---VR(V)  
Reverse Leakage Current vs Reverse Voltage  
100  
10  
Tj=75℃  
Tj=25℃  
1
0.1  
0.01  
0
20  
40  
60  
80 100 120 140  
Percentage Rated Peak Reverse Voltage---(%)  
1N581XLB  
CYStek Product Specification