CY7C1019BV33
Data Retention Characteristics Over the Operating Range (L Version Only)
Parameter Description Conditions
for Data Retention No input may exceed V + 0.5V
Min.
Max.
Unit
V
V
V
2.0
DR
CC
CC
V
= V = 2.0V,
CC
DR
I
t
t
Data Retention Current
150
µA
ns
CCDR
CE > V – 0.3V,
V
CC
[3]
Chip Deselect to Data Retention Time
Operation Recovery Time
0
> V – 0.3V or V < 0.3V
CDR
R
IN
CC IN
200
µs
Data Retention Waveform
DATA RETENTION MODE
> 2V
3.0V
3.0V
V
V
CC
DR
t
t
R
CDR
CE
1019BV33–5
Switching Waveforms
[9, 10]
Read Cycle No. 1
t
RC
ADDRESS
t
AA
t
OHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
1019BV33–6
[10, 11]
Read Cycle No. 2 (OE Controlled)
ADDRESS
CE
t
RC
t
ACE
OE
t
HZOE
t
DOE
t
HZCE
t
LZOE
HIGH
IMPEDANCE
HIGH IMPEDANCE
DATA OUT
DATA VALID
t
LZCE
t
PD
ICC
t
PU
V
CC
50%
50%
SUPPLY
CURRENT
ISB
1019BV33–7
Notes:
9. Device is continuously selected. OE, CE = VIL.
10. WE is HIGH for read cycle.
11. Address valid prior to or coincident with CEtransition LOW.
4
CYPRESS [ CYPRESS ]
