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C450UT190-S1400-30_16 参数 Datasheet PDF下载

C450UT190-S1400-30_16图片预览
型号: C450UT190-S1400-30_16
PDF下载: 下载PDF文件 查看货源
内容描述: [Low Forward Voltage 2.9 V Typical at 5 mA]
分类和应用:
文件页数/大小: 6 页 / 298 K
品牌: CREE [ CREE, INC ]
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Maximum Ratings at TA = 25°CNotes 1&3  
DCꢀForwardꢀCurrent  
CxxxUT190-Sxxxx-30  
30ꢀmA  
PeakꢀForwardꢀCurrentꢀ(1/10ꢀdutyꢀcycleꢀ@ꢀ1ꢀkHz)  
LEDꢀJunctionꢀTemperature  
100ꢀmA  
125°C  
ReverseꢀVoltage  
5ꢀV  
OperatingꢀTemperatureꢀRange  
-40°Cꢀtoꢀ+100°C  
-40°Cꢀtoꢀ+120°C  
≤30°Cꢀ/ꢀ≤85%ꢀRH  
1000ꢀV  
LEDꢀChipꢀStorageꢀTemperature  
RecommendedꢀDieꢀSheetꢀStorageꢀConditions  
ElectrostaticꢀDischargeꢀThresholdꢀ(HBM)ꢀNoteꢀ2  
ElectrostaticꢀDischargeꢀClassificationꢀ(MIL-STD-883E)ꢀNoteꢀ2  
Classꢀ2  
Note 3  
Typical Electrical/Optical Characteristics at TA = 25°C, If = 5 mA  
Reverse Current  
[I(Vr=5 V), μA]  
Full Width Half Max  
Part Number  
Forward Voltage (Vf, V)  
(λD, nm)  
Min.  
Typ.  
2.9  
2.9  
2.9  
3.0  
Max.  
Max.  
Typ.  
21  
C450UT190-Sxxxx-30  
C460UT190-Sxxxx-30  
C470UT190-Sxxxx-30  
C527UT190-Sxxxx-30  
2.7  
2.7  
2.7  
2.7  
3.1  
3.1  
3.1  
3.2  
2
2
2
2
21  
22  
35  
Mechanical Specifications  
Description  
CxxxUT190-Sxxxx-30  
Dimension  
Tolerance  
±ꢀ25  
P-NꢀJunctionꢀAreaꢀ(μm)  
ChipꢀTopꢀAreaꢀ(μm)  
160ꢀxꢀ160  
190ꢀxꢀ190  
105ꢀxꢀ105  
85  
±ꢀ25  
ChipꢀBottomꢀAreaꢀ(μm)  
ChipꢀThicknessꢀ(μm)  
±ꢀ25  
±ꢀ10  
AuꢀBondꢀPadꢀDiameterꢀ(μm)  
AuꢀBondꢀPadꢀThicknessꢀ(μm)  
BacksideꢀContactꢀMetalꢀAreaꢀ(μm)  
70  
-5,ꢀ+15  
±ꢀ0.5  
±ꢀ25  
1.2  
80ꢀxꢀ80  
Notes:  
1.ꢀ Maximumꢀ ratingsꢀ areꢀ packageꢀ dependent.ꢀ Theꢀ aboveꢀ ratingsꢀ wereꢀ determinedꢀ usingꢀ aꢀ T-1ꢀ 3/4ꢀ packageꢀ (withꢀ Hysolꢀ OS4000ꢀ  
epoxy)ꢀforꢀcharacterization.ꢀRatingsꢀforꢀotherꢀpackagesꢀmayꢀdiffer.ꢀTheꢀforwardꢀcurrentsꢀ(DCꢀandꢀPeak)ꢀareꢀnotꢀlimitedꢀbyꢀtheꢀdieꢀ  
butꢀbyꢀtheꢀeffectꢀofꢀtheꢀLEDꢀjunctionꢀtemperatureꢀonꢀtheꢀpackage.ꢀTheꢀjunctionꢀtemperatureꢀlimitꢀofꢀ125°CꢀisꢀaꢀlimitꢀofꢀtheꢀT-1ꢀ  
3/4ꢀpackage;ꢀjunctionꢀtemperatureꢀshouldꢀbeꢀcharacterizedꢀinꢀaꢀspecificꢀpackageꢀtoꢀdetermineꢀlimitations.ꢀAssemblyꢀprocessingꢀ  
temperatureꢀmustꢀnotꢀexceedꢀ325°Cꢀ(<ꢀ5ꢀseconds).  
2.ꢀ Productꢀresistanceꢀtoꢀelectrostaticꢀdischargeꢀ(ESD)ꢀaccordingꢀtoꢀtheꢀHBMꢀisꢀmeasuredꢀbyꢀsimulatingꢀESDꢀusingꢀaꢀrapidꢀavalancheꢀ  
energyꢀtestꢀ(RAET).ꢀTheꢀRAETꢀproceduresꢀareꢀdesignedꢀtoꢀapproximateꢀtheꢀminimumꢀESDꢀratingsꢀshown.ꢀTheꢀESDꢀclassificationꢀofꢀ  
Classꢀ2ꢀisꢀbasedꢀonꢀsampleꢀtestingꢀaccordingꢀtoꢀMIL-STD-883E.ꢀ  
3.ꢀ Allꢀproductsꢀconformꢀtoꢀtheꢀlistedꢀminimumꢀandꢀmaximumꢀspecificationsꢀforꢀelectricalꢀandꢀopticalꢀcharacteristicsꢀwhenꢀassembledꢀ  
andoperatedat5mAwithinthemaximumratingsshownabove.Efficiencydecreasesathighercurrents.Typicalvaluesgivenꢀ  
arewithintherangeofaveragevaluesexpectedbymanufacturerinlargequantitiesandareprovidedforinformationonly.Allꢀ  
measurementsꢀwereꢀmadeꢀusingꢀlampsꢀinꢀT-1ꢀ3/4ꢀpackagesꢀ(withꢀHysolꢀOS4000ꢀepoxy).ꢀOpticalꢀcharacteristicsꢀmeasuredꢀinꢀanꢀ  
integratingꢀsphereꢀusingꢀIlluminanceꢀE.  
4.ꢀ Caution:ꢀ Toꢀ obtainꢀ optimumꢀ outputꢀ efficiency,ꢀ theꢀ amountꢀ ofꢀ epoxyꢀ usedꢀ shouldꢀ beꢀ characterizedꢀ basedꢀ uponꢀ theꢀ specificꢀ  
application.ꢀ  
Cree, Inc.  
4600 Silicon Drive  
Copyright © 2011-2012 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,  
the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.  
Durham, NC 27703-8475 USA  
Tel: +1-919-313-5300  
Fax: +1-919-313-5870  
www.cree.com/chips  
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CPR3EO Rev. A