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C450TR5050-S18000 参数 Datasheet PDF下载

C450TR5050-S18000图片预览
型号: C450TR5050-S18000
PDF下载: 下载PDF文件 查看货源
内容描述: 粘接芯片粘接低正向电压3.3 V时典型120毫安 [Adhesive Die Attach Low Forward Voltage 3.3 V Typical at 120 mA]
分类和应用:
文件页数/大小: 5 页 / 519 K
品牌: CREE [ CREE, INC ]
 浏览型号C450TR5050-S18000的Datasheet PDF文件第1页浏览型号C450TR5050-S18000的Datasheet PDF文件第3页浏览型号C450TR5050-S18000的Datasheet PDF文件第4页浏览型号C450TR5050-S18000的Datasheet PDF文件第5页  
Maximum Ratings at TA = 25°CNotes 1&3  
DCꢀForwardꢀCurrentꢀNoteꢀ4  
CxxxTR5050-Sxx000  
180ꢀmA  
PeakꢀForwardꢀCurrentꢀ(1/10ꢀdutyꢀcycleꢀ@ꢀ1ꢀkHz)  
LEDꢀJunctionꢀTemperature  
230ꢀmA  
150°C  
ReverseꢀVoltage  
5ꢀV  
OperatingꢀTemperatureꢀRange  
-40°Cꢀtoꢀ+100°C  
-40°Cꢀtoꢀ+100°C  
1000ꢀV  
StorageꢀTemperatureꢀRange  
ElectrostaticꢀDischargeꢀThresholdꢀ(HBM)ꢀNoteꢀ2  
ElectrostaticꢀDischargeꢀClassificationꢀ(MIL-STD-883E)ꢀNoteꢀ2  
Classꢀ2  
Note 3  
Typical Electrical/Optical Characteristics at TA = 25°C, If = 120 mA  
Reverse Current  
[I(Vr=5V), μA]  
Full Width Half Max  
Part Number  
Forward Voltage (Vf, V)  
(λD, nm)  
Min.  
Typ.  
3.3  
Max.  
Max.  
Typ.  
20  
C450TR5050-Sxx000  
C460TR5050-Sxx000  
2.7  
2.7  
3.5  
3.5  
2
2
3.3  
21  
Mechanical Specifications  
Description  
CxxxTR5050-Sxx000  
Dimension  
Tolerance  
±35  
P-NꢀJunctionꢀAreaꢀ(μm)  
ChipꢀAreaꢀ(μm)  
426ꢀxꢀ443  
500ꢀxꢀ500  
175  
±35  
ChipꢀThicknessꢀ(μm)  
±15  
AuꢀBondꢀPadꢀDiameterꢀAnodeꢀ(μm)  
AuꢀBondꢀPadꢀThicknessesꢀ(μm)  
AuꢀBondꢀPadꢀDiamaterꢀCathodeꢀ(μm)  
BottomꢀAreaꢀꢀ(μm)  
90  
±10  
1.0  
±0.5  
±10  
98  
327ꢀxꢀ327  
±35  
Notes:  
1.ꢀ Maximumꢀratingsꢀareꢀpackage-dependent.ꢀTheꢀaboveꢀratingsꢀwereꢀdeterminedꢀusingꢀlampsꢀinꢀchip-on-MCPCBꢀ(metalꢀcoreꢀPCB)ꢀ  
packagesꢀforꢀcharacterization.ꢀRatingsꢀforꢀotherꢀpackagesꢀmayꢀdiffer.ꢀJunctionꢀtemperatureꢀshouldꢀbeꢀcharacterizedꢀinꢀaꢀspecificꢀ  
packageꢀtoꢀdetermineꢀlimitations.ꢀAssemblyꢀprocessingꢀtemperatureꢀmustꢀnotꢀexceedꢀ325°Cꢀ(<ꢀ5ꢀseconds).  
2.ꢀ Productꢀresistanceꢀtoꢀelectrostaticꢀdischargeꢀ(ESD)ꢀaccordingꢀtoꢀtheꢀHBMꢀisꢀmeasuredꢀbyꢀsimulatingꢀESDꢀusingꢀaꢀrapidꢀavalancheꢀ  
energyꢀtestꢀ(RAET).ꢀTheꢀRAETꢀproceduresꢀareꢀdesignedꢀtoꢀapproximateꢀtheꢀmaximumꢀESDꢀratingsꢀshown.  
3.ꢀ Allꢀproductsꢀconformꢀtoꢀtheꢀlistedꢀminimumꢀandꢀmaximumꢀspecificationsꢀforꢀelectricalꢀandꢀopticalꢀcharacteristicsꢀwhenꢀassembledꢀ  
andꢀoperatedꢀatꢀ120ꢀmAꢀwithinꢀtheꢀmaximumꢀratingsꢀshownꢀabove.ꢀEfficiencyꢀdecreasesꢀatꢀhigherꢀcurrents.ꢀTypicalꢀvaluesꢀgivenꢀ  
arewithintherangeofaveragevaluesexpectedbymanufacturerinlargequantitiesandareprovidedforinformationonly.Allꢀ  
measurementsꢀwereꢀmadeꢀusingꢀlampsꢀinꢀT-1ꢀ3/4ꢀpackagesꢀ(withꢀHysolꢀOS4000ꢀepoxyꢀencapsulantꢀandꢀclearꢀepoxyꢀdieꢀattach).ꢀ  
OpticalꢀcharacteristicsꢀmeasuredꢀinꢀanꢀintegratingꢀsphereꢀusingꢀIlluminanceꢀE.  
4.ꢀ TheꢀmaximumꢀforwardꢀcurrentꢀisꢀdeterminedꢀbyꢀtheꢀthermalꢀresistanceꢀbetweenꢀtheꢀLEDꢀjunctionꢀandꢀambient.ꢀItꢀisꢀcrucialꢀforꢀ  
theꢀend-productꢀtoꢀbeꢀdesignedꢀinꢀaꢀmannerꢀthatꢀminimizesꢀtheꢀthermalꢀresistanceꢀfromꢀtheꢀLEDꢀjunctionꢀtoꢀambientꢀinꢀorderꢀtoꢀ  
optimizeꢀproductꢀperformance.  
Cree,ꢀInc.  
4600ꢀSiliconꢀDrive  
Copyrightꢀ©ꢀ2011ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ  
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTRꢀandꢀTR5050ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀꢀ  
Durham,ꢀNCꢀ27703  
USAꢀTel:ꢀ+1.919.313.5300  
www.cree.com  
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