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C450TR2227-0209 参数 Datasheet PDF下载

C450TR2227-0209图片预览
型号: C450TR2227-0209
PDF下载: 下载PDF文件 查看货源
内容描述: 矩形LED射频性能低正向电压 - 3.3 V时典型20毫安 [Rectangular LED Rf Performance Low Forward Voltage - 3.3 V Typical at 20 mA]
分类和应用: 射频
文件页数/大小: 5 页 / 389 K
品牌: CREE [ CREE, INC ]
 浏览型号C450TR2227-0209的Datasheet PDF文件第1页浏览型号C450TR2227-0209的Datasheet PDF文件第3页浏览型号C450TR2227-0209的Datasheet PDF文件第4页浏览型号C450TR2227-0209的Datasheet PDF文件第5页  
Maximum Ratings at TA = 25°CNotes 1&3  
DCꢀForwardꢀCurrent  
CxxxTR2227-Sxx00  
30ꢀmA  
PeakꢀForwardꢀCurrentꢀ(1/10ꢀdutyꢀcycleꢀ@ꢀ1ꢀkHz)  
LEDꢀJunctionꢀTemperature  
70ꢀmA  
125°C  
ReverseꢀVoltage  
5ꢀV  
OperatingꢀTemperatureꢀRange  
-40°Cꢀtoꢀ+100°C  
-40°Cꢀtoꢀ+100°C  
1000ꢀV  
StorageꢀTemperatureꢀRange  
ElectrostaticꢀDischargeꢀThresholdꢀ(HBM)ꢀNoteꢀ2  
ElectrostaticꢀDischargeꢀClassificationꢀ(MIL-STD-883E)ꢀNoteꢀ2  
Classꢀ2  
Note 3  
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA  
Reverse Current  
[I(Vr=5V), μA]  
Full Width Half Max  
Part Number  
Forward Voltage (Vf, V)  
(λD, nm)  
Min.  
Typ.  
3.3  
Max.  
Max.  
Typ.  
20  
C450TR2227-Sxx00  
C460TR2227-Sxx00  
C527TR2227-Sxx00  
2.7  
2.7  
2.9  
3.7  
3.7  
3.9  
2
2
2
3.3  
21  
3.4  
34  
Mechanical Specifications  
Description  
CxxxTR2227-Sxx00  
Dimension  
Tolerance  
±35  
P-NꢀJunctionꢀAreaꢀ(μm)  
ChipꢀAreaꢀ(μm)  
190ꢀxꢀ230  
220ꢀxꢀ270  
50  
±35  
ChipꢀThicknessꢀ(μm)  
±15  
AuꢀBondꢀPadꢀDiameterꢀAnodeꢀ(μm)  
AuꢀBondꢀPadꢀThicknessesꢀ(μm)  
AuꢀBondꢀPadꢀAreaꢀCathodeꢀ(μm)  
BottomꢀAreaꢀꢀ(μm)  
80  
-5,ꢀ+15  
±0.5  
1.0  
80ꢀxꢀ80  
190ꢀxꢀ240  
-5,ꢀ+15  
±35  
Notes:  
1.ꢀ Maximumꢀ ratingsꢀ areꢀ package-dependent.ꢀ Theꢀ aboveꢀ ratingsꢀ wereꢀ determinedꢀ usingꢀ aꢀ T-1ꢀ 3/4ꢀ packageꢀ (withꢀ Hysolꢀ OS4000ꢀ  
epoxy)ꢀforꢀcharacterization.ꢀRatingsꢀforꢀotherꢀpackagesꢀmayꢀdiffer.ꢀTheꢀforwardꢀcurrentsꢀ(DCꢀandꢀPeak)ꢀareꢀnotꢀlimitedꢀbyꢀtheꢀdieꢀ  
butꢀbyꢀtheꢀeffectꢀofꢀtheꢀLEDꢀjunctionꢀtemperatureꢀonꢀtheꢀpackage.ꢀTheꢀjunctionꢀtemperatureꢀlimitꢀofꢀ125°CꢀisꢀaꢀlimitꢀofꢀtheꢀT-1ꢀ  
3/4ꢀpackage;ꢀjunctionꢀtemperatureꢀshouldꢀbeꢀcharacterizedꢀinꢀaꢀspecificꢀpackageꢀtoꢀdetermineꢀlimitations.ꢀAssemblyꢀprocessingꢀ  
temperatureꢀmustꢀnotꢀexceedꢀ325°Cꢀ(<ꢀ5ꢀseconds).ꢀ  
2.ꢀ Productꢀresistanceꢀtoꢀelectrostaticꢀdischargeꢀ(ESD)ꢀaccordingꢀtoꢀtheꢀHBMꢀisꢀmeasuredꢀbyꢀsimulatingꢀESDꢀusingꢀaꢀrapidꢀavalancheꢀ  
energyꢀtestꢀ(RAET).ꢀTheꢀRAETꢀproceduresꢀareꢀdesignedꢀtoꢀapproximateꢀtheꢀmaximumꢀESDꢀratingsꢀshown.ꢀTheꢀRAETꢀprocedureꢀisꢀ  
performedꢀonꢀeachꢀdie.ꢀTheꢀESDꢀclassificationꢀofꢀClassꢀ2ꢀisꢀbasedꢀonꢀsampleꢀtestingꢀaccordingꢀtoꢀMIL-STD-883E.  
3.ꢀ Allꢀproductsꢀconformꢀtoꢀtheꢀlistedꢀminimumꢀandꢀmaximumꢀspecificationsꢀforꢀelectricalꢀandꢀopticalꢀcharacteristicsꢀwhenꢀassembledꢀ  
andꢀoperatedꢀatꢀ20ꢀmAꢀwithinꢀtheꢀmaximumꢀratingsꢀshownꢀabove.ꢀEfficiencyꢀdecreasesꢀatꢀhigherꢀcurrents.ꢀTypicalꢀvaluesꢀgivenꢀ  
arewithintherangeofaveragevaluesexpectedbymanufacturerinlargequantitiesandareprovidedforinformationonly.Allꢀ  
measurementsꢀwereꢀmadeꢀusingꢀlampsꢀinꢀT-1ꢀ3/4ꢀpackagesꢀ(withꢀHysolꢀOS4000ꢀepoxy).ꢀOpticalꢀcharacteristicsꢀmeasuredꢀinꢀanꢀ  
integratingꢀsphereꢀusingꢀIlluminanceꢀE.  
4.ꢀ Specificationsꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.  
Cree,ꢀInc.  
4600ꢀSiliconꢀDrive  
Copyrightꢀ©ꢀ2010ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ  
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTRꢀandꢀTR2227ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀ  
Durham,ꢀNCꢀ27703  
USAꢀTel:ꢀ+1.919.313.5300  
www.cree.com  
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