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C450EZ700-SXX000 参数 Datasheet PDF下载

C450EZ700-SXX000图片预览
型号: C450EZ700-SXX000
PDF下载: 下载PDF文件 查看货源
内容描述: Cree㈢ EZ700⑩ LED [Cree㈢ EZ700⑩ LED]
分类和应用:
文件页数/大小: 6 页 / 371 K
品牌: CREE [ CREE, INC ]
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Maximum Ratings at TA = ꢁ5°CNote ꢀ  
DC Forward Current  
CxxxEZ700-Sxx000  
500 mA  
Note 4  
Peak Forward Current  
1000 mA  
LED Junction Temperature  
Reverse Voltage  
125°C  
5 V  
Operating Temperature Range  
Storage Temperature Range  
Electrostatic Discharge Threshold Rating (HBM)  
-40°C to +100°C  
-40°C to +120°C  
1000 V  
Note 2  
Note 3  
Typical Electrical/Optical Characteristics at TA = ꢁ5°C, If = 350 mA  
Reverse Current  
[I(Vr=5 V), μA]  
Full Width Half Max  
Part Number  
Forward Voltage (Vf, V)  
(λD, nm)  
Min.  
Typ.  
3.6  
Max.  
Max.  
Typ.  
21  
C450EZ700-Sxx000  
C460EZ700-Sxx000  
C470EZ700-Sxx000  
3.0  
3.0  
3.0  
3.9  
3.9  
3.9  
2
2
2
3.6  
21  
3.6  
22  
Mechanical Specifications  
Description  
CxxxEZ700-Sxx000  
Dimension  
Tolerance  
±25  
P-N Junction Area (μm)  
Chip Area (μm)  
650 x 650  
680 x 680  
100  
±25  
Chip Thickness (μm)  
±25  
Top Au Bond Pad (μm)  
Au Bond Pad Thickness (μm)  
Back Contact Metal Area (μm)  
Back Contact Metal Thickness (μm)  
130 x 130  
3.0  
±15  
±1.0  
±25  
680 x 680  
3.0  
±1.0  
Notes:  
1. Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an  
encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a  
specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree  
EZBright Applications Note for assembly-process information.  
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche  
energy test (RAET). The RAET procedures are designed to approximate the minimum ESD ratings shown.  
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled  
and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values  
given are within the range of average expected by the manufacturer in large quantities and are provided for information only.  
All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an  
integrating sphere using Illuminance E.  
4. This peak forward current specification is based on a 400 ms pulse width at a 1/5-duty cycle with a junction temperature of  
65°C.  
Cree, Inc.  
4600 Silicon Drive  
Copyright © 2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the  
Cree logo are registered trademarks, and EZBright, EZ, and EZ700 are trademarks of Cree, Inc.  
Durham, NC 27703  
USA Tel: +1.919.313.5300  
www.cree.com  
CPR3DF Rev. A