Maximum Ratings at TA = 25°CNotes 1&3
DC Forward Current
CxxxEZ400-Sxx00-2
200 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
350 mA
150°C
Reverse Voltage
5 V
Operating Temperature Range
-40°C to +100°C
-40°C to +120°C
≤30°C / ≤85% RH
2000 V
LED Chip Storage Temperature Range
Recommended Die Sheet Storage Conditions
Note 2
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 3
Typical Electrical/Optical Characteristics at TA = 25°C, If = 150 mA
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
Part Number
Forward Voltage (Vf, V)
(λD, nm)
Min.
Typ.
3.25
3.25
3.25
3.35
Max.
Max.
Typ.
21
C450EZ400-Sxx00-2
C460EZ400-Sxx00-2
C470EZ400-Sxx00-2
C527EZ400-Sxx00-2
2.9
2.9
2.9
3.0
3.6
3.6
3.6
3.8
2
2
2
2
21
22
35
Mechanical Specifications
Description
CxxxEZ400-Sxx00-2
Dimension
Tolerance
± 25
P-N Junction Area (μm)
Top Area (μm)
350 x 350
380 x 380
380 x 380
170
± 25
Bottom Area (μm)
± 25
Chip Thickness (μm)
± 25
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Ohmic Metal Area (μm)
Back Ohmic Metal Thickness (μm)
110
-15, +5
± 1.0
± 25
3.0
380 x 380
3.0
± 0.3
Notes:
1. Maximum ratings are package-dependent. The above ratings were determined using a silicone encapsulated chip on MCPCB for
characterization. The junction temperature should be characterized in a specific package to determine limitations. Assembly
processing temperature limit is <325°C (< 5 seconds). See the Cree EZBright Applications Note for assembly-process information.
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure
is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
250
3. All products conform to the listed minimum and maximum
specifications for electrical and optical characteristics when
assembled and operated at 150 mA within the maximum ratings
shown above. Efficiency decreases at higher currents. Typical
200
values given are within the range of average values expected
by the manufacturer in large quantities and are provided for
150
information only. All measurements were made using a Au-
plated header without an encapsulant. Optical characteristics
were measured in an integrating sphere using Illuminance E.
100
Rth j-a
Rth j-a
Rth j-a = 30 °C/W
=
=
10 °C/W
20 °C/W
4. The maximum forward current is determined by the thermal
resistance between the LED junction and ambient. It is crucial
for the end-product to be designed in a manner that minimizes
the thermal resistance from the LED junction to ambient in
order to optimize product performance.
50
0
Rth j-a = 40 °C/W
25
50
75
100
125
150
5. Specifications are subject to change without notice.
AmbientTemperature (°C)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1.919.313.5300
© 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree® and EZBright®
are registered trademarks, and the Cree logo, EZ™ and EZ400-n™ are trademarks of Cree, Inc.
Fax: +1.919.313.5778
www.cree.com/chips
2
CPR3ED Rev A (201605)
CREE [ CREE, INC ]
