Cree
®
EZ290-n™ Gen 2 LEDs
Data Sheet (Cathode-up)
CxxxEZ290-Sxx00-2
Cree’s EZBright
®
LEDs are the latest generation of solid-state n-pad up LED emitters that combine highly efficient
InGaN materials with Cree’s proprietary optical design and device technology to deliver superior value for high-
intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.
Additionally, these LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the flux
eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height.
Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad
range of applications, such as wearable devices, video displays and LCD backlighting.
FEATURES
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Lambertian Radiation Pattern
Cathode-up design (n-pad up)
EZBright LED Technology, binned @ 20 mA
– 450 nm – 24+ mW
– 460 nm – 24+ mW
– 470 nm – 21+ mW
– 527 nm – 8+ mW
Low Forward Voltage (Vf) – 3.0 V Typical at 20 mA
Maximum DC Forward Current – 50 mA
AuSn Backside Metal for use with Conductive Adhesives,
Flux Eutectic Attach, Solder Paste & Solder Preforms
2 kV Class 2 ESD Rating
APPLICATIONS
•
LCD Backlighting
– Mobile Devices
– Monitors
Video Displays
Wearable Devices
Automotive Interior
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CxxxEZ290-Sxx00-2 Chip Diagram
Cathode (-), Ø100
µm
B
CPR3EJ Rev
Data Sheet:
Mesa (Junction)
225 x 225
µm
280 x 280
µm
Top View
Backside Ohmic
Metallization
Thickness
170
µm
Side View
Anode (+)
Bottom View
Subject to change without notice.
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