Maximum Ratings at TA = 25°CNotes 1,3, & 4
DCꢀForwardꢀCurrent
CxxxDA2432-Sxxx00-2
100ꢀmA
PeakꢀForwardꢀCurrentꢀ(1/10ꢀdutyꢀcycleꢀ@ꢀ1ꢀkHz)
LEDꢀJunctionꢀTemperature
150ꢀmA
150°C
ReverseꢀVoltage
5ꢀV
OperatingꢀTemperatureꢀRange
-40°Cꢀtoꢀ+100°C
-40°Cꢀtoꢀ+120°C
≤30°Cꢀ/ꢀ≤85%ꢀRH
1000ꢀV
LEDꢀChipꢀStorageꢀTemperature
RecommendedꢀDieꢀSheetꢀStorageꢀConditions
ElectrostaticꢀDischargeꢀThresholdꢀ(HBM)ꢀNoteꢀ2
ElectrostaticꢀDischargeꢀClassificationꢀ(MIL-STD-883E)ꢀNoteꢀ2
Classꢀ2
Note 3
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
Part Number
Forward Voltage (Vf, V)
(λD, nm)
Min.
Typ.
3.1
Max.
Max.
Typ.
20
C450DA2432-Sxxx00-2
C460DA2432-Sxxx00-2
C470DA2432-Sxxx00-2
2.8
2.8
2.8
3.4
3.4
3.4
2
2
2
3.1
21
3.1
21
Mechanical Specifications
Description
CxxxDA2432-Sxxx00-2
Dimension
Tolerance
±35
P-NꢀJunctionꢀAreaꢀ(μm)
ChipꢀBottomꢀAreaꢀ(μm)
ChipꢀTopꢀAreaꢀ(μm)
210ꢀxꢀ280
240ꢀxꢀ320
110ꢀxꢀ190
140
±35
±35
ChipꢀThicknessꢀ(μm)
±15
BondꢀPadꢀWidthꢀ–ꢀAnodeꢀ(um)
BondꢀPadꢀLengthꢀ–ꢀAnodeꢀ(um)
BondꢀPadꢀWidthꢀ–ꢀCathodeꢀ(um)
BondꢀPadꢀLengthꢀ–ꢀCathodeꢀ(um)
BondꢀPadꢀGapꢀ(μm)
60
±15
170
±35
105
±35
145
±35
60
±15
BondꢀPadꢀThicknessꢀ(μm)
3
±0.5
Notes:
1.ꢀ Maximumꢀratingsꢀareꢀpackage-dependent.ꢀTheꢀaboveꢀratingsꢀwereꢀdeterminedꢀusingꢀaꢀchipꢀsub-mountꢀonꢀMCPCBꢀ(withꢀsiliconeꢀencapsulationꢀandꢀfluxꢀ
eutecticꢀdieꢀattach)ꢀforꢀcharacterization.ꢀRatingsꢀforꢀotherꢀpackagesꢀmayꢀdiffer.ꢀJunctionꢀtemperatureꢀshouldꢀbeꢀcharacterizedꢀinꢀaꢀspecificꢀpackageꢀtoꢀ
determineꢀlimitations.ꢀAssemblyꢀprocessingꢀtemperatureꢀmustꢀnotꢀexceedꢀ325°Cꢀ(<ꢀ5ꢀseconds).
2.ꢀ Productꢀresistanceꢀtoꢀelectrostaticꢀdischargeꢀ(ESD)ꢀaccordingꢀtoꢀtheꢀ
HBMꢀisꢀmeasuredꢀbyꢀsimulatingꢀESDꢀusingꢀaꢀrapidꢀavalancheꢀenergyꢀ
testꢀ(RAET).ꢀTheꢀRAETꢀproceduresꢀareꢀdesignedꢀtoꢀapproximateꢀtheꢀ
maximumꢀESDꢀratingsꢀshown.ꢀꢀTheꢀESDꢀclassificationꢀofꢀClassꢀ2ꢀisꢀ
basedꢀonꢀsamplingꢀtestingꢀaccordingꢀtoꢀMIL-STD-883E.ꢀ
120
100
80
60
40
20
0
3.ꢀ Allꢀ productsꢀ conformꢀ toꢀ theꢀ listedꢀ minimumꢀ andꢀ maximumꢀ
specificationsꢀ forꢀ electricalꢀ andꢀ opticalꢀ characteristicsꢀ whenꢀ
assembledꢀ andꢀ operatedꢀ atꢀ 50ꢀ mAꢀ withinꢀ theꢀ maximumꢀ ratingsꢀ
shownꢀ above.ꢀ Efficiencyꢀ decreasesꢀ atꢀ higherꢀ currents.ꢀ Typicalꢀ
valuesꢀgivenꢀareꢀwithinꢀtheꢀrangeꢀofꢀaverageꢀvaluesꢀexpectedꢀbyꢀ
manufacturerꢀinꢀlargeꢀquantitiesꢀandꢀareꢀprovidedꢀforꢀinformationꢀ
only.ꢀ Allꢀ measurementsꢀ areꢀ basedꢀ onꢀ aꢀ thru-holeꢀ packageꢀ (withꢀ
HysolꢀOS4000ꢀencapsulantꢀandꢀfluxꢀeutecticꢀdieꢀattach).ꢀꢀOpticalꢀ
characteristicsꢀ areꢀ measuredꢀ inꢀ anꢀ integratingꢀ sphereꢀ usingꢀ
IlluminanceꢀE.
Rth j-a = 10 °C/W
Rth j-a = 20 °C/W
Rth j-a = 30 °C/W
Rth j-a = 40 °C/W
4.ꢀ Theꢀ maximumꢀ forwardꢀ currentꢀ isꢀ determinedꢀ byꢀ theꢀ thermalꢀ
resistanceꢀbetweenꢀtheꢀLEDꢀjunctionꢀandꢀambient.ꢀItꢀisꢀcrucialꢀforꢀ
theꢀend-productꢀtoꢀbeꢀdesignedꢀinꢀaꢀmannerꢀthatꢀminimizesꢀtheꢀ
thermalꢀresistanceꢀfromꢀtheꢀLEDꢀjunctionꢀtoꢀambientꢀinꢀorderꢀtoꢀ
optimizeꢀproductꢀperformance.
100
110
120
130
140
150
AmbientTemperature (°C)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475
USA Tel: +1.919.313.5300
Fax: +1.919.313.5870
www.cree.com/chips
Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree® and
the Cree logo are registered trademarks, and Direct Attach™ and DA2432™ are trademarks of Cree, Inc.
2
CPR3FM Rev A
CREE [ CREE, INC ]
