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C430CB290-S2100_16 参数 Datasheet PDF下载

C430CB290-S2100_16图片预览
型号: C430CB290-S2100_16
PDF下载: 下载PDF文件 查看货源
内容描述: [SuperBlue Generation II LEDs]
分类和应用:
文件页数/大小: 4 页 / 280 K
品牌: CREE [ CREE, INC ]
 浏览型号C430CB290-S2100_16的Datasheet PDF文件第1页浏览型号C430CB290-S2100_16的Datasheet PDF文件第3页浏览型号C430CB290-S2100_16的Datasheet PDF文件第4页  
Maximum Ratings at TA = 25°CNotes 1&3  
DCꢀForwardꢀCurrent  
C430CB290-S2100  
30ꢀmA  
PeakꢀForwardꢀCurrentꢀ(1/10ꢀdutyꢀcycleꢀ@ꢀ1kHz)  
LEDꢀJunctionꢀTemperature  
70ꢀmA  
125°C  
ReverseꢀVoltage  
5ꢀV  
OperatingꢀTemperatureꢀRange  
-40°Cꢀtoꢀ+100°C  
-40°Cꢀtoꢀ+100°C  
1000ꢀV  
StorageꢀTemperatureꢀRange  
ElectrostaticꢀDischargeꢀThresholdꢀ(HBM)ꢀNoteꢀ2  
ElectrostaticꢀDischargeꢀClassificationꢀ(MIL-STD-883E)ꢀNoteꢀ2  
Classꢀ2ꢀ  
Note 3  
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA  
Forward  
Voltage  
(Vf, V)  
Reverse  
Current  
[I(Vr=5V), μA]  
Peak  
Wavelength  
(λd, nm)  
Dominant  
Full Width  
Half Max  
(λD, nm)  
Radiant Flux  
(P, mW)  
Part Number  
Wavelength  
(λd, nm)  
Typ.  
4.0  
Max.  
Min.  
Typ.  
Max.  
Typ.  
Min.  
461  
Typ.  
Max.  
465  
Typ.  
C430CB290-S2100  
4.5  
0.85  
1.3  
10  
423  
463  
59  
Mechanical Specifications  
Description  
C430CB290-S2100  
Dimension  
240ꢀxꢀ240  
260ꢀxꢀ260  
260ꢀxꢀ260  
250  
Tolerance  
±ꢀ35  
P-NꢀJunctionꢀAreaꢀ(μm2)  
TopꢀAreaꢀ(μm2)  
±ꢀ35  
BottomꢀAreaꢀ(μm2)  
±ꢀ35  
ChipꢀThicknessꢀ(μm)  
±ꢀ25  
AuꢀBondꢀPadꢀDiameterꢀ(μm)  
AuꢀBondꢀPadꢀThicknessꢀ(μm)  
BackꢀContactꢀMetalꢀDiameterꢀ(μm)  
114  
±ꢀ20  
1.1  
±ꢀ0.5  
±ꢀ20  
114  
Notes:  
1.ꢀ Maximumꢀ ratingsꢀ areꢀ packageꢀ dependent.ꢀ Theꢀ aboveꢀ ratingsꢀ wereꢀ determinedꢀ usingꢀ aꢀ T-1ꢀ 3/4ꢀ packageꢀ (withꢀ Hysolꢀ OS4000ꢀ  
epoxy)ꢀforꢀcharacterization.ꢀRatingsꢀforꢀotherꢀpackagesꢀmayꢀdiffer.ꢀTheꢀforwardꢀcurrentsꢀ(DCꢀandꢀPeak)ꢀareꢀnotꢀlimitedꢀbyꢀtheꢀdieꢀ  
butꢀbyꢀtheꢀeffectꢀofꢀtheꢀLEDꢀjunctionꢀtemperatureꢀonꢀtheꢀpackage.ꢀTheꢀjunctionꢀtemperatureꢀlimitꢀofꢀ125°CꢀisꢀaꢀlimitꢀofꢀtheꢀT-1ꢀ  
3/4ꢀpackage;ꢀjunctionꢀtemperatureꢀshouldꢀbeꢀcharacterizedꢀinꢀaꢀspecificꢀpackageꢀtoꢀdetermineꢀlimitations.ꢀAssemblyꢀprocessingꢀ  
temperatureꢀmustꢀnotꢀexceedꢀ325°Cꢀ(<5ꢀseconds).  
2.ꢀ Productꢀresistanceꢀtoꢀelectrostaticꢀdischargeꢀ(ESD)ꢀaccordingꢀtoꢀtheꢀHBMꢀisꢀmeasuredꢀbyꢀsimulatingꢀESDꢀusingꢀaꢀrapidꢀavalancheꢀ  
energyꢀtestꢀ(RAET).ꢀTheꢀRAETꢀproceduresꢀareꢀdesignedꢀtoꢀapproximateꢀtheꢀmaximumꢀESDꢀratingsꢀshown.ꢀTheꢀESDꢀclassificationꢀ  
ofꢀClassꢀ2ꢀisꢀbasedꢀonꢀsampleꢀtestingꢀaccordingꢀtoꢀMIL-STD-883E.  
3.ꢀ Allꢀproductsꢀconformꢀtoꢀtheꢀlistedꢀminimumꢀandꢀmaximumꢀspecificationsꢀforꢀelectricalꢀandꢀopticalꢀcharacteristicsꢀwhenꢀassembledꢀ  
andꢀoperatedꢀatꢀ20ꢀmAꢀwithinꢀtheꢀmaximumꢀratingsꢀshownꢀabove.ꢀEfficiencyꢀdecreasesꢀatꢀhigherꢀcurrents.ꢀTypicalꢀvaluesꢀgivenꢀ  
areꢀwithinꢀtheꢀrangeꢀofꢀaverageꢀvaluesꢀexpectedꢀbyꢀtheꢀmanufacturerꢀinꢀlargeꢀquantitiesꢀandꢀareꢀprovidedꢀforꢀinformationꢀonly.ꢀAllꢀ  
measurementsꢀwereꢀmadeꢀusingꢀlampsꢀinꢀT-1ꢀ3/4ꢀpackagesꢀ(withꢀHysolꢀOS4000ꢀepoxy).ꢀOpticalꢀcharacteristicsꢀmeasuredꢀinꢀanꢀ  
integratingꢀsphereꢀusingꢀIlluminanceꢀA.ꢀ  
Cree, Inc.  
4600 Silicon Drive  
Copyright © 2008 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the  
Cree logo and G•SiC are registered trademarks, and SuperBlue is a trademark of Cree, Inc.  
Durham, NC 27703-8475 USA  
Tel: +1-919-313-5300  
Fax: +1-919-313-5870  
www.cree.com/chips  
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CPR3DN Rev. -